參數(shù)資料
型號: GS816036BGT-300
廠商: GSI TECHNOLOGY
元件分類: SRAM
英文描述: 512K X 36 CACHE SRAM, 5.3 ns, PQFP100
封裝: LEAD FREE, TQFP-100
文件頁數(shù): 2/24頁
文件大小: 444K
代理商: GS816036BGT-300
GS816018/32/36BT-300/250/200/150
Preliminary
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.02 2/2005
10/24
2004, GSI Technology
Simplified State Diagram
First Write
First Read
Burst Write
Burst Read
Deselect
R
W
CR
CW
X
WR
R
WR
X
Simple
Synchronous
Operation
Simple
Burst
Synchronou
sOperation
CR
R
CW
CR
Notes:
1. The diagram shows only supported (tested) synchronous state transitions. The diagram presumes G is tied low.
2. The upper portion of the diagram assumes active use of only the Enable (E1, E2, and E3) and Write (BA, BB, BC, BD, BW, and GW)
control inputs, and that ADSP is tied high and ADSC is tied low.
3. The upper and lower portions of the diagram together assume active use of only the Enable, Write, and ADSC control inputs, and
assumes ADSP is tied high and ADV is tied low.
相關(guān)PDF資料
PDF描述
GS816037T-133I 512K X 36 CACHE SRAM, 3.5 ns, PQFP100
GS8160E18AT-300 1M X 18 CACHE SRAM, 5 ns, PQFP100
GS8160V18AGT-150IT 1M X 18 CACHE SRAM, 7.5 ns, PQFP100
GS8160V36BGT-150I 512K X 36 CACHE SRAM, 7.5 ns, PQFP100
GS8160ZV18AGT-150I 1M X 18 ZBT SRAM, 7.5 ns, PQFP100
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
GS816036BT-150 制造商:GSI 制造商全稱:GSI Technology 功能描述:1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
GS816036BT-150I 制造商:GSI 制造商全稱:GSI Technology 功能描述:1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
GS816036BT-150IV 制造商:GSI 制造商全稱:GSI Technology 功能描述:1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
GS816036BT-150V 制造商:GSI 制造商全稱:GSI Technology 功能描述:1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
GS816036BT-200 制造商:GSI 制造商全稱:GSI Technology 功能描述:1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs