參數(shù)資料
型號： GPN2222A
廠商： GTM CORPORATION
英文描述： NPN EPITAXIAL PLANAR TRANSISTOR
中文描述： 瑞展晶體管
文件頁數(shù)： 1/3頁
文件大?。?/td> 148K
代理商： GPN2222A
1/3
ISSUED DATE :2004/07/09
REVISED DATE :2004/11/29B
L
e 1
b
e
S E A T IN G
P L A N E
b 1
A
D
C
S 1
E
GPN2222A
N
N P
P N
N E
E P
P II T
T A
A X
X II A
A L
L P
P L
L A
A N
N A
A R
R T
T A
A N
N S
S II S
S T
T O
O R
R
Description
The GPN2222A is designed for general purpose amplifier and high speed, medium-power switching applications.
Features
*Low Collector Saturation Voltage
*High Speed Switching
*For Complementary Use with PNP Type GPN2907A
Package Dimensions
Millimeter
REF.
Min.
Max.
REF.
Min.
Max.
A
4.45
4.7
D
4.44
4.7
S1
1.02
-
E
3.30
3.81
b
0.36
0.51
L
12.70
-
b1
0.36
0.76
e1
1.150
1.390
C
0.36
0.51
e
2.42
2.66
Absolute Maximum Ratings at Ta = 25 ::::
Parameter
Symbol
Ratings
Unit
Junction Temperature
Tj
+150
Storage Temperature
Tstg
-55 ~ +150
Collector to Base Voltage
VCBO
75
V
Collector to Emitter Voltage
VCEO
40
V
Emitter to Base Voltage
VEBO
6
V
Collector Current
IC
600
mA
Total Power Dissipation
PD
625
mW
Characteristics at Ta = 25 ::::
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
75
-
V
IC=10uA ,IE=0
BVCEO
40
-
V
IC=10mA ,IB=0
BVEBO
6
-
V
IE=10uA ,IC=0
ICBO
-
10
nA
VCE=60V, IE = 0
ICEX
-
10
nA
VCE=60V,VBE(OFF)=3V
IEBO
-
50
nA
VEB=3V, Ic = 0
*VCE(sat)1
-
0.3
V
IC=150mA, IB=15mA
*VCE(sat)2
-
1.0
V
IC=500mA, IB=50mA
*VBE(sat)1
-
1.2
V
IC=150mA, IB=15mA
* VBE(sat)2
-
2
V
IC=500mA, IB=50mA
*hFE1
35
-
VCE=10V, IC=100uA
*hFE2
50
-
VCE=10V, IC=1mA
*hFE3
75
-
VCE=10V,IC=10mA
*hFE4
100
-
300
VCE=10V,IC=150mA
*hFE5
40
-
VCE=10V,IC=500mA
*hFE6
50
-
VCE=1V,IC=150mA
fT
300
-
MHz
VCE=20V, IC=20mA, f=100MHz
Cob
-
8
pF
VCB=10V, IE = 0,f=1MHz
* Pulse Test: Pulse Width 380us, Duty Cycle 2%
TO-92
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