參數(shù)資料
型號： GPN2907A
廠商： GTM CORPORATION
英文描述： PNP EPITAXIAL PLANAR TRANSISTOR
中文描述： 進步黨外延平面晶體管
文件頁數(shù)： 1/2頁
文件大?。?/td> 237K
代理商： GPN2907A
!
1/2
ISSUED DATE :2003/12/15
REVISED DATE :2004/11/29B
G
G P
P N
N 22990077A
A
P
P N
N P
P E
E P
P II T
T A
A X
X II A
A L
L P
P L
L A
A N
N A
A R
R T
T R
R A
A N
N S
S II S
S T
T O
O R
R
Description
The GPN2907A is designed for general purpose amplifier and high speed, medium-power switching applications
Features
*Low Collect Saturation voltage.
*High Speed Switching.
*For Complementary Use with NPN Type GPN2222A.
Package Dimensions
Millimeter
REF.
Min.
Max.
REF.
Min.
Max.
A
4.45
4.7
D
4.44
4.7
S1
1.02
-
E
3.30
3.81
b
0.36
0.51
L
12.70
-
b1
0.36
0.76
e1
1.150
1.390
C
0.36
0.51
e
2.42
2.66
Absolute Maximum Ratings at Ta = 25 ::::
Parameter
Symbol
Ratings
Unit
Junction Temperature
Tj
+150
Storage Temperature
Tstg
-55 ~ +150
Collector to Base Voltage
VCBO
-60
V
Collector to Emitter Voltage
VCEO
-60
V
Emitter to Base Voltage
VEBO
-5
V
Collector Current
IC
-600
mA
Total Power Dissipation
PD
625
mW
Electrical Characteristics at Ta = 25 ::::
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
-60
-
V
IC=-10uA, IE=0
BVCEO
-60
-
V
IC=-10mA, IB=0
BVEBO
-5
-
V
IC=-10uA, IC=0
ICBO
-
-10
nA
VCB=-50V, IC=0
ICEX
-
-50
nA
VCE-30V, VBE=-0.5
VCE(sat)1
-
-0.2
-0.4
V
IC=-150mA, IB=-15mA
VCE(sat)2
-
-0.5
-1.6
V
IC=-500mA, IB=-50mA
VBE(sat)1
-
-1.3
V
IC=-150mA, IB=-15mA
VBE(sat)2
-
-2.6
V
IC=-500mA, IB=-50mA
hFE1
75
-
VCE=-10V, IC=-100uA
hFE2
100
-
VCE=-10V, IC=-1mA
hFE3
100
VCE=-10V, IC=-10mA
hFE4
100
180
300
VCE=-10V, IC=-150mA
hFE5
50
-
VCE=-10V, IC=-500mA
fT
200
-
MHZ
VCE=-20V,IC=-50mA,f=100MHZ
Cob
-
8
pF
VCB=-10V,F=1MHZ
L
e1
b
e
SEATING
PLANE
b1
A
D
C
S1
E
TO-92
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