參數(shù)資料
型號(hào)： GP2W1002YP0F
廠商： Sharp Microelectronics
文件頁(yè)數(shù)： 13/14頁(yè)
文件大小： 373K
描述： IRDA MODULE 1152KBPS 8SMD
標(biāo)準(zhǔn)包裝： 2,000
系列： *
數(shù)據(jù)速率： 1.152Mbs（MIR）
電源電壓： 2.7 V ~ 5.5 V
無(wú)效電流，標(biāo)準(zhǔn)值@ 25° C： 0.01µA
通信距離，低功率： 20cm，1m
方向： 側(cè)視圖
工作溫度： -25°C ~ 85°C
尺寸： 8mm x 3mm x 2.5mm
標(biāo)準(zhǔn)： IrPHY 1.4
關(guān)機(jī)： *
包裝： 帶卷 (TR)
GP2W1002YP0F
Sheet No.: E3-A00201EN
13
 ?SPAN class="pst GP2W1002YP0F_2589044_4">Cleaning Instructions
Solvent cleaning :
 
Solvent temperature 45 or less, Immersion for 3 min or less
Ultrasonic cleaning :
 
The effect to device by ultrasonic cleaning differs by cleaning bath size, ultrasonic power output,
 
cleaning time, PCB size or device mounting condition etc.
 
Please test it in actual using condition and confirm that doesn't occur any defect before starting
 
the ultrasonic cleaning. The cleaning shall be carried out with solvent below.
Recommended Solvent materials :
 
Ethyl alcohol, Methyl alcohol, Isopropyl alcohol
 ?SPAN class="pst GP2W1002YP0F_2589044_4">Presence of ODC etc.



Infrared data
communication device



Category
Toxic and hazardous substances
Lead
(Pb)
Mercury
(Hg)
admium
(Cd)
exavalent
chromium
(Cr
6+
)
Polybrominated
biphenyls
(PBB)
olybrominated
diphenyl ethers
(PBDE)
This
This
This
This product
product
product
product sha
 sha
 sha
 shall n
ll n
ll n
ll not c
ot c
ot c
ot conta
onta
onta
ontain
in
in
in the
the
the
the foll
foll
foll
followi
owi
owi
owing ma
ng ma
ng ma
ng materi
teri
teri
terials.
als.
als.
als.
And
And
And
And the
 the
 the
 they are
y are
y are
y are not us
 not us
 not us
 not used
ed
ed
ed in
in
in
in the
the
the
the product
product
product
production
ion
ion
ion proce
 proce
 proce
 process f
ss f
ss f
ss for thi
or thi
or thi
or this p
s p
s p
s prod
rod
rod
roduct
uct
uct
uct....
Regul
Regul
Regul
Regulation
ation
ation
ation subst
 subst
 subst
 substances
ances
ances
ances : C
: C
: C
: CFCs
FCs
FCs
FCs, Ha
, Ha
, Ha
, Halon
lon
lon
lon, Carbon t
, Carbon t
, Carbon t
, Carbon tetra
etra
etra
etrachlo
chlo
chlo
chlorid
rid
rid
ride,
e,
e,
e, 1.1.1-T
1.1.1-T
1.1.1-T
1.1.1-Tric
ric
ric
richlor
hlor
hlor
hloroet
oet
oet
oethane
hane
hane
hane (M
 (M
 (M
 (Methy
ethy
ethy
ethylchlo
lchlo
lchlo
lchlorof
rof
rof
roform
orm
orm
orm))))
Specif
Specif
Specif
Specific
ic
ic
ic bromi
bromi
bromi
brominat
nat
nat
nated
ed
ed
ed fla
fla
fla
flame r
me r
me r
me reta
eta
eta
etardant
rdant
rdant
rdants su
s su
s su
s such
ch
ch
ch as th
as th
as th
as the P
e P
e P
e PBB a
BB a
BB a
BB and PB
nd PB
nd PB
nd PBDE a
DE a
DE a
DE are
re
re
re not us
not us
not us
not used
ed
ed
ed in
in
in
in this
this
this
this produc
produc
produc
product at all.
t at all.
t at all.
t at all.
" Th
" Th
" Th
" The R
e R
e R
e RoHS
oHS
oHS
oHS dire
 dire
 dire
 directive
ctive
ctive
ctive (2002/95/
(2002/95/
(2002/95/
(2002/95/EC)
EC)
EC)
EC)
  Thi
  Thi
  Thi
  This p
s p
s p
s product
roduct
roduct
roduct com
 com
 com
 compli
pli
pli
plies w
es w
es w
es with
ith
ith
ith the
the
the
the RoHS
RoHS
RoHS
RoHS dire
 dire
 dire
 directive
ctive
ctive
ctive (2002
(2002
(2002
(2002/95
/95
/95
/95/EC
/EC
/EC
/EC).
).
).
).
  Obj
  Obj
  Obj
  Object su
ect su
ect su
ect subst
bst
bst
bstances:
ances:
ances:
ances: lead,
lead,
lead,
lead, ca
 ca
 ca
 cadmi
dmi
dmi
dmium, he
um, he
um, he
um, hexaval
xaval
xaval
xavalent
ent
ent
ent chr
chr
chr
chromi
omi
omi
omium, pol
um, pol
um, pol
um, polybrom
ybrom
ybrom
ybrominated
inated
inated
inated biphe
 biphe
 biphe
 biphenyls
nyls
nyls
nyls (P
 (P
 (P
 (PBB)
BB)
BB)
BB) and
and
and
and
  polybrom
  polybrom
  polybrom
  polybrominated
inated
inated
inated diphe
 diphe
 diphe
 diphenyl e
nyl e
nyl e
nyl ether
ther
ther
thers (
s (
s (
s (PBDE)
PBDE)
PBDE)
PBDE)
 
" C
" C
" C
" Conte
onte
onte
ontent of s
nt of s
nt of s
nt of six
ix
ix
ix sub
sub
sub
substances
stances
stances
stances specif
specif
specif
specified
ied
ied
ied in 
 in 
 in 
 in  Ma
 Ma
 Ma
 Manage
nage
nage
nagement
ment
ment
ment Metho
Metho
Metho
Methods f
ds f
ds f
ds for C
or C
or C
or Contr
ontr
ontr
ontrol of
ol of
ol of
ol of Pol
 Pol
 Pol
 Pollutio
lutio
lutio
lution Ca
n Ca
n Ca
n Cause
use
use
used by El
d by El
d by El
d by Electro
ectro
ectro
ectronic
nic
nic
nic
  Informa
  Informa
  Informa
  Information
tion
tion
tion Produc
 Produc
 Produc
 Products R
ts R
ts R
ts Regu
egu
egu
egulation
lation
lation
lation  (Chi
  (Chi
  (Chi
  (Chines
nes
nes
nese :
e :
e :
e : 5P?/SPAN>o?/SPAN>?/SPAN>a?/SPAN>?/SPAN>6?/SPAN>?/SPAN>?/SPAN>))))
: in
: in
: in
: indic
dic
dic
dicates th
ates th
ates th
ates that th
at th
at th
at the co
e co
e co
e conte
nte
nte
ntent of t
nt of t
nt of t
nt of the t
he t
he t
he toxic
oxic
oxic
oxic and haz
 and haz
 and haz
 and hazard
ard
ard
ardous s
ous s
ous s
ous subst
ubst
ubst
ubstance
ance
ance
ance in
in
in
in all th
all th
all th
all the h
e h
e h
e homoge
omoge
omoge
omogeneous
neous
neous
neous ma
 ma
 ma
 materi
teri
teri
terials o
als o
als o
als of the
f the
f the
f the part
 part
 part
 part
  is
  is
  is
  is bel
 bel
 bel
 below t
ow t
ow t
ow the c
he c
he c
he conce
once
once
oncentra
ntra
ntra
ntration
tion
tion
tion li
 li
 li
 limit r
mit r
mit r
mit requ
equ
equ
equire
ire
ire
irement
ment
ment
ment as d
as d
as d
as descri
escri
escri
escribed i
bed i
bed i
bed in SJ
n SJ
n SJ
n SJ/T
/T
/T
/T 11363-2006 st
11363-2006 st
11363-2006 st
11363-2006 stand
and
and
andard
ard
ard
ard....
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