參數(shù)資料
型號(hào)： GMM7658287CNTG-5
英文描述： x64 EDO Page Mode DRAM Module
中文描述： X64的EDO公司頁(yè)面模式內(nèi)存模塊
文件頁(yè)數(shù)： 6/29頁(yè)
文件大?。?/td> 425K
代理商： GMM7658287CNTG-5
LG Semicon
DC Electrical Characteristics
(V
CC
= 3.3V+/-10%, T
A
= 0 ~ 70C)
GMM7654287CTG
Symbol
Parameter
Note
V
OH
V
OL
Output Level
Output Level Voltage (I
OUT
= -2mA)
Unit
V
V
Max
Min
Output Level
Output Level Voltage (I
OUT
= 2mA)
I
CC1
-
Operating Current
Average Power Supply Operating Current
(RAS, CAS, Address Cycling: t
RC
= t
RC
min
)
50ns
60ns
-
1, 2
I
CC2
Standby Current (TTL)
Power Supply Standby Current
(RAS, CAS = V
IH
)
-
I
CC3
RAS Only Refresh Current
Average Power Supply Current
RAS Only Mode
(RAS Cycling, CAS = V
IH
, t
RC
= t
RC
min
)
2
I
CC4
Extended Data Out Mode Current
Average Power Supply Current
EDO Page Mode
(t
HPC
=
t
HPC
min)
1, 3
-
50ns
60ns
-
-
50ns
60ns
-
I
CC5
Standby Current (CMOS)
Power Supply Standby Current
(RAS, CAS>=V
CC
-0.2V)
-
I
CC6
CAS before RAS Refresh Current
(t
RC
= t
RC
min
)
-
50ns
60ns
-
I
CC7
Standby Current RAS = V
IH
CAS = V
IL
D
OUT
= Enable
Self-Refresh Mode Current
(RAS, CAS
0.2V
,
D
OUT
=
High-Z, CMOS interface)
-
mA
mA
mA
mA
mA
mA
mA
2.4
Vcc
0
0.4
600
560
8
600
560
480
440
2
600
560
20
I
I(L)
I
O(L)
Input Leakage Current
Any Input (0V
V
IN
4.6V)
Output Leakage Current
(D
OUT
is Disabled, 0V
V
OUT
4.6V)
uA
uA
5
5
-5
-5
Battery Back Up Operating Current(Standby with CBR Ref.)
( t
RC
=31.25us
,
t
RAS
=300ns,Dout=High-Z)
-
4,5
uA
I
CC8
I
CC9
uA
1,600
-
5
2,000
Note: 1. I
CC
depends on output load condition when the device is selected. I
CC(max)
is specified at the
output open condition.
2. Address can be changed once or less while RAS = V
IL
.
3. Mwasured with one sequential address change per EDO cycle, t
HPC
.
4. V
IH
>=V
CC
-0.2V, 0V
V
IL
0.2V
5. L-version
1
6
相關(guān)PDF資料
PDF描述
GMM7658287CNTG-6 x64 EDO Page Mode DRAM Module
GMM77316280CTG 16Mx72|3.3V|5/6|x 18|FP/EDO DRAM - 128MB Buffered DIMM
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