參數(shù)資料
型號: GMBTA06
廠商: GTM CORPORATION
英文描述: NPN SILICON TRANSISTOR
中文描述: NPN硅晶體管
文件頁數(shù): 1/2頁
文件大小: 240K
代理商: GMBTA06
GMBTA06
Page: 1/2
ISSUED DATE :2003/07/15
REVISED DATE :2006/05/26B
G
G M
M B
B T
TA
A0066
N
N P
P N
N S
S II L
L II C
C O
O N
N T
T R
R A
A N
N S
S II S
S T
T O
O R
R
Description
The GMBTA06 is designed for general purpose amplifier applications.
Package Dimensions
Millimeter
REF.
Min.
Max.
REF.
Min.
Max.
A
2.70
3.10
G
1.90 REF.
B
2.40
2.80
H
1.00
1.30
C
1.40
1.60
K
0.10
0.20
D
0.35
0.50
J
0.40
-
E
0
0.10
L
0.85
1.15
F
0.45
0.55
M
10°
Absolute Maximum Ratings at Ta = 25 ::::
Parameter
Symbol
Ratings
Unit
Junction Temperature
Tj
+150
:
Storage Temperature
Tstg
-55~+150
:
Collector to Base Voltage
VCBO
80
V
Collector to Emitter Voltage
VCEO
80
V
Emitter to Base Voltage
VEBO
4
V
Collector Current
IC
500
mA
Total Power Dissipation(Note1)
PD
350
mW
Note 1.Device mounted on FR-4=1.6*1.6*0.06in
Electrical Characteristics(Ta = 25 : ,unless otherwise noted)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
80
-
V
IC=100uA, IE=0
BVCEO
80
-
V
IC=1mA, IB=0
BVEBO
4
-
V
IE=100uA, IC=0
ICBO
-
100
nA
VCB=80V, IE=0
ICEO
-
100
nA
VCE=80V, IB=0
*VCE(sat)
-
250
mV
IC=100mA, IB=10mA
*VBE(on)
-
1.2
V
VCE=1V, IC=100mA
*hFE1
50
-
VCE=1V, IC=10mA
*hFE2
50
-
VCE=1V, IC=100mA
fT
100
-
MHz
VCE=2V, IC=10mA, f=100MHz
* Pulse Test: Pulse Width 380 s, Duty Cycle 2%
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