參數(shù)資料
型號: GMBTA94
廠商: GTM CORPORATION
英文描述: PNP EPITAXIAL PLANAR TRANSISTOR
中文描述: 進步黨外延平面晶體管
文件頁數(shù): 1/2頁
文件大?。?/td> 192K
代理商: GMBTA94
GMBTA94
Page: 1/2
ISSUED DATE :2002/03/25
REVISED DATE :2006/10/13B
G
G M
M B
B T
TA
A9944
P
P N
N P
P E
E P
P II T
T A
A X
X II A
A L
L P
P L
L A
A N
N A
A R
R T
T R
R A
A N
N S
S II S
S T
T O
O R
R
Description
The GMBTA94 is designed for application requires high voltage.
Package Dimensions
Millimeter
REF.
Min.
Max.
REF.
Min.
Max.
A
2.70
3.10
G
1.90 REF.
B
2.40
2.80
H
1.00
1.30
C
1.40
1.60
K
0.10
0.20
D
0.35
0.50
J
0.40
-
E
0
0.10
L
0.85
1.15
F
0.45
0.55
M
10°
Absolute Maximum Ratings at Ta = 25 ::::
Parameter
Symbol
Ratings
Unit
Junction Temperature
Tj
+150
:
Storage Temperature
Tstg
-55~+150
:
Collector to Base Voltage
VCBO
-400
V
Collector to Emitter Voltage
VCEO
-400
V
Emitter to Base Voltage
VEBO
-6
V
Collector Current
IC
-300
mA
Total Power Dissipation
PD
350
mW
Electrical Characteristics (Ta = 25 ,
: unless otherwise noted)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
-400
-
V
IC=-100uA, IE=0
BVCEO
-400
-
V
IC=-1mA, IB=0
BVEBO
-6
-
V
IE=-10uA, IC=0
ICBO
-
-100
nA
VCB=-400V, IE=0
IEBO
-
-100
nA
VEB=-4V, IC=0
ICES
-
-500
nA
VCE=-400V
VCE(sat)1
-
-350
mV
IC=-1mA, IB=-0.1mA
VCE(sat)2
-
-500
mV
IC=-20mA, IB=-2mA
VCE(sat)3
-
-750
mV
IC=-50mA, IB=-5mA
VBE(sat)
-
-750
mV
IC=-10mA, IB=-1mA
hFE1
40
-
VCE=-10V, IC=-1mA
hFE2
50
-
300
VCE=-10V, IC=-10mA
hFE3
45
-
VCE=-10V, IC=-50mA
hFE4
20
-
VCE=-10V, IC=-100mA
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