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參數(shù)資料
| 型號(hào)： | GM72V66841ET-7J |
| 英文描述： | x8 SDRAM |
| 中文描述： | x8 SDRAM內(nèi)存 |
| 文件頁數(shù)： | 4/10頁 |
| 文件大?。?/td> | 81K |
| 代理商： | GM72V66841ET-7J |
GM72V66441ET/ELT
Rev. 1.1/Apr.01
DC Characteristics
(Ta = 0 to 70C, V
CC
, V
CCQ
= 3.3 V +/- 0.3 V, V
SS
, V
SSQ
= 0 V)
Parameter
Symbol
Unit Test conditions
Notes
Operating
current
Standby current in
power down
Standby current in
power down
(input signal stable)
Standby current in
non power down
(CAS Latency=2)
Standby current in
non power down
(input signal stable)
I
CC2P
Self refresh current
I
CC6
mA
V
IH
>=V
CC
- 0.2
V
IL
<=0.2V
7
Burst length= 1
t
RC
= min
CKE = V
IL
,
t
CK
= 12 ns
1, 2, 3
5
I
CC1
mA
mA
I
CC2PS
CKE=V
IL
,
t
CK
= infinity
6
mA
I
CC2N
CKE,CS = V
IH
,
t
CK
= 12ns
4
mA
I
CC2NS
CKE = V
IH
,
t
CK
= infinity
4
mA
Active standby current
in power down
I
CC3P
CKE = V
IL
,
t
CK
= 12 ns,
DQ = High-Z
1,2,5
mA
Active standby current
in power down
(input signal stable)
I
CC3PS
CKE = V
IL
,
t
CK
= infinity
2,6
mA
Active standby current
in non power down
I
CC3N
CKE,CS = V
IH
,
t
CK
= 12 ns,
DQ = High-Z
1,2,4
mA
Active standby current
in non power down
(input signal stable)
I
CC3NS
CKE = V
IH
,
t
CK
= infinity
2,9
mA
Burst
operating
current
I
CC4
t
CK
= min
BL = 4
1,2,3
mA
( CL= 2 )
I
CC4
mA
( CL= 3 )
Refresh current
t
RC
= min
3
I
CC5
mA
7,8
6,8
- 8
Max
80
150
Max
-7J
80
120
- 75
Max
85
150
Max
-7K
80
120
- 7
Max
1
85
2
2
15
12
6
5
20
120
150
160
0.4
0.4
30
-4-
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相關(guān)代理商/技術(shù)參數(shù) |
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| GM72V66841ET-7K | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM |
| GM72V66841ET-8 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 SDRAM |
| GM72V66841EXX | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM |
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