參數(shù)資料
型號: GLT5640L32-6
廠商: Electronic Theatre Controls, Inc.
英文描述: CMOS Synchronous DRAM 2M x 32 SDRAM
中文描述: 200萬的CMOS同步DRAM × 32內(nèi)存
文件頁數(shù): 23/72頁
文件大?。?/td> 2315K
代理商: GLT5640L32-6
G-LINK
GLT5640AL16
4M X 16 CMOS Synchronous Dynamic RAM
Feb 2004 (Rev.0.1)
G-Link Technology Corporation, Taiwan
Web : www.glink.com.tw Email : sales@glink.com.tw
TEL : 886-2-27968078
- 23 -
9.3 Write to Read Command Interval
The write command to read command interval is also a minimum of 1 cycle. Only the write data before the read command will
be written. The data bus must be Hi-Z at least one cycle prior to the first DOUT.
WRITE to READ Command Interval
9.4 Read to Write Command Interval
During a read cycle, READ can be interrupted by WRITE.
DQM must be in High at least 3 clocks prior to the write command. There is a restriction to avoid a data conflict. The data bus
must be Hi-Z using DQM before Write.
Burst lengh=4
CLK
Command
CAS latency=2
DQ
Command
CAS latency=3
DQ
QB0
QB3
QB2
QB1
WRITE A
Write A
T0
T1
T2
T3
T4
T5
T6
T7
T8
QB0
QB3
QB2
QB1
1 cycle
Read B
DA0
Read B
DA0
Hi-Z
Hi-Z
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