參數(shù)資料
型號: GLT5640L32-5
廠商: Electronic Theatre Controls, Inc.
英文描述: CMOS Synchronous DRAM 2M x 32 SDRAM
中文描述: 200萬的CMOS同步DRAM × 32內(nèi)存
文件頁數(shù): 21/72頁
文件大?。?/td> 2315K
代理商: GLT5640L32-5
G-LINK
GLT5640AL16
4M X 16 CMOS Synchronous Dynamic RAM
Feb 2004 (Rev.0.1)
G-Link Technology Corporation, Taiwan
Web : www.glink.com.tw Email : sales@glink.com.tw
TEL : 886-2-27968078
- 21 -
8.2 Write with Auto Precharge
During a write cycle, the auto precharge starts at the timing that is equal to the value of t
DPL
(min.) after the last data word input
to the device.
WRITE with AUTO PRECHRGE
In summary, the auto precharge cycle begins relative to a reference clock that indicates the
last data word is valid.
In the table below, minus means clocks before the reference; plus means clocks after the
reference.
CAS
latency
2
3
Read
Write
-1
-2
+ t
DPL
(min.)
+ t
DPL
(min.)
Burst lengh = 4
CLK
Command
CAS latency = 2
DQ
Command
CAS latency = 3
DQ
Remark WRITA means WRITE with AUTO Precharge
Hi - Z
DB0
DB3
DB2
DB1
WRITA B
WRITA B
T0
T1
T
2
T3
T4
T5
T6
T7
Hi - Z_
T8
t
DPL
t
DPL
DB0
DB3
DB2
DB1
AUTO PRECHARGE starts
AUTO PRECHARGE starts
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