參數(shù)資料
型號(hào): GLT5640L32-10
廠商: Electronic Theatre Controls, Inc.
英文描述: CMOS Synchronous DRAM 2M x 32 SDRAM
中文描述: 200萬(wàn)的CMOS同步DRAM × 32內(nèi)存
文件頁(yè)數(shù): 26/72頁(yè)
文件大?。?/td> 2315K
代理商: GLT5640L32-10
G-LINK
GLT5640AL16
4M X 16 CMOS Synchronous Dynamic RAM
Feb 2004 (Rev.0.1)
G-Link Technology Corporation, Taiwan
Web : www.glink.com.tw Email : sales@glink.com.tw
TEL : 886-2-27968078
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10.2 PRECHARGE TERMINATION
10.2.1 PRECHARGE TERMINATION in READ Cycle
During READ cycle, the burst read operation is terminated by a precharge command.
When the precharge command is issued, the burst read operation is terminated and precharge starts.
The same bank can be activated again after t
RP
from the precharge command.
When
CAS
latency is 2, the read data will remain valid until one clock after the precharge command.
When
CAS
latency is 3, the read data will remain valid until two clocks after the precharge command.
Precharge Termination in READ Cycle
Burst lengh= X
CLK
Command
CAS latency=2
DQ
Hi-Z
Read
T0
T1
T2
T3
T4
T5
T6
T7
T8
PRE
ACT
DQ
Read
PRE
ACT
t
R P
CAS latency=3
Q0
Q3
Q2
Q1
Hi-Z
Q0
Q3
Q2
Q1
command
t
R P
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
GLT5640L32-5 制造商:未知廠家 制造商全稱:未知廠家 功能描述:CMOS Synchronous DRAM 2M x 32 SDRAM
GLT5640L32-5.5 制造商:未知廠家 制造商全稱:未知廠家 功能描述:CMOS Synchronous DRAM 2M x 32 SDRAM
GLT5640L32-6 制造商:未知廠家 制造商全稱:未知廠家 功能描述:CMOS Synchronous DRAM 2M x 32 SDRAM
GLT5640L32-7 制造商:未知廠家 制造商全稱:未知廠家 功能描述:CMOS Synchronous DRAM 2M x 32 SDRAM
GLT5640L32-8 制造商:未知廠家 制造商全稱:未知廠家 功能描述:CMOS Synchronous DRAM 2M x 32 SDRAM