參數(shù)資料
型號(hào): GLT5160L16-10FJ
廠商: Electronic Theatre Controls, Inc.
英文描述: 16M (2-Bank x 524288-Word x 16-Bit) Synchronous DRAM
中文描述: 1,600(2 -銀行甲524288字× 16位)同步DRAM
文件頁(yè)數(shù): 17/45頁(yè)
文件大?。?/td> 399K
代理商: GLT5160L16-10FJ
17
G-LINK Technology
DEC. 2003 (Rev.2.4)
[Write Interrupted by Precharge]
Burst write operation can be interrupted by precharge of the same
bank. Random column access is allowed. Because the write recov-
ery time (t
RDL
) is required between the last input data and the next
PRE, 3rd data should be masked with DQMU / DQML shown as
below.
[Write Interrupted by Burst Terminate]
Burst terminate command can terminate burst write operation. In
this case, the write recovery time is not required and the bank
remains active. The figure below shows the case 3 words of data are
written. Random column access is allowed. WRITE to TBST inter-
val is minimum 1 CLK.
CLK
Command
DQ
Figure 15. WRITE Interrupted by Precharge (BL=4)
A[9:0]
A[10]
BA
DQMU,
This data should be masked to satisfy t
RDL
requirement.
0
0
Di0
Ya
Xb
WRITE
PRE
ACT
0
Xb
0
0
Di1
CLK
Command
DQ
Figure 16. WRITE Interrupted by Burst Terminate (BL=4)
A[9:0]
A[10]
BA
DQMU,
Da0
Ya
WRITE
TBST
Da1
0
0
Da2
相關(guān)PDF資料
PDF描述
GLT5640AL16 4M X 16 CMOS Synchronous Dynamic RAM
GLT5640AL16-10TC 4M X 16 CMOS Synchronous Dynamic RAM
GLT5640AL16-5.5TC 4M X 16 CMOS Synchronous Dynamic RAM
GLT5640AL16-6TC 4M X 16 CMOS Synchronous Dynamic RAM
GLT5640AL16-7TC 4M X 16 CMOS Synchronous Dynamic RAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
GLT5160L16-10TC 制造商:未知廠家 制造商全稱:未知廠家 功能描述:16M (2-Bank x 524288-Word x 16-Bit) Synchronous DRAM
GLT5160L16-6FJ 制造商:未知廠家 制造商全稱:未知廠家 功能描述:16M (2-Bank x 524288-Word x 16-Bit) Synchronous DRAM
GLT5160L16-6TC 制造商:未知廠家 制造商全稱:未知廠家 功能描述:16M (2-Bank x 524288-Word x 16-Bit) Synchronous DRAM
GLT5160L16-7FJ 制造商:未知廠家 制造商全稱:未知廠家 功能描述:16M (2-Bank x 524288-Word x 16-Bit) Synchronous DRAM
GLT5160L16-7TC 制造商:未知廠家 制造商全稱:未知廠家 功能描述:16M (2-Bank x 524288-Word x 16-Bit) Synchronous DRAM