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參數(shù)資料
| 型號(hào)： | GFD30N03 |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 40A I(D) | TO-252AA |
| 中文描述： | 晶體管| MOSFET的| N溝道| 30V的五（巴西）直| 40A條（丁）|對(duì)252AA |
| 文件頁(yè)數(shù)： | 1/5頁(yè) |
| 文件大?。?/td> | 88K |
| 代理商： | GFD30N03 |
GFD30N03
Vishay Semiconductor
Document Number 74557
10-Dec-01
www.vishay.com
1
New Product
N-Channel Enhancement-Mode MOSFET
T
RENCH
G
EN
F
ET
Maximum Ratings and Thermal Characteristics
(T
C
= 25°C unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
V
DS
30
V
Gate-Source Voltage
V
GS
±
20
Continuous Drain Current
Pulsed Drain Current
(1)
I
D
43
A
I
DM
120
Maximum Power Dissipation
T
C
= 25°C
T
C
= 100°C
P
D
44.5
17.8
W
Operating Junction and Storage Temperature Range
T
J
, T
stg
–55 to 150
°C
Junction-to-Case Thermal Resistance
Junction-to-Ambient Thermal Resistance
(2)
R
θ
JC
2.8
°C/W
R
θ
JA
50
Note:
(1) Pulse width limited by maximum junction temperature
(2) 1-in
2
2oz. Cu PCB mounted
V
DS
30V
R
DS(ON)
15
m
I
D
43A
Features
Advanced Trench Process Technology
High Density Cell Design for Ultra Low On-Resistance
Specially Designed for Low Voltage DC/DC Converters
Fast Switching for High Efficiency
Mechanical Data
Case:
JEDEC TO-252 molded plastic body
Terminals:
Solder plated, solderable per MIL-STD-750,
Method 2026
High temperature soldering guaranteed:
250°C/10 seconds at terminals
Weight:
0.011oz., 0.4g
0.190
(4.826)
0.243
(6.172)
0.063
(1.6)
0.165
(4.191)
0.100
(2.54)
0.118
(3.0)
0.245 (6.22)
0.235 (5.97)
0.040 (1.02)
0.025 (0.64)
0.410 (10.41)
0.380 (9.65)
0.170 (4.32) min.
0.214 (5.44)
0.206 (5.23)
D
0.265 (6.73)
0.255 (6.48)
0.023 (0.58)
0.018 (0.46)
0.094 (2.39)
0.087 (2.21)
0.204 (5.18)
0.156 (3.96)
0.197 (5.00)
0.177 (4.49)
0.035 (0.89)
0.028 (0.71)
G
S
0.023 (0.58)
0.018 (0.46)
0.045 (1.14)
0.035 (0.89)
0.009 (0.23)
0.001 (0.03)
0.0min.
0.060 (1.52)
0.045 (1.14)
0.050 (1.27)
0.035 (0.89)
TO-252 (DPAK)
Dimensions in inches
and (millimeters)
Mounting Pad Layout
G
D
S
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