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參數(shù)資料
| 型號(hào)： | GFD50N03A |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 78A I(D) | TO-252AA |
| 中文描述： | 晶體管| MOSFET的| N溝道| 30V的五（巴西）直|第78A（?。﹟對(duì)252AA |
| 文件頁(yè)數(shù)： | 1/5頁(yè) |
| 文件大?。?/td> | 118K |
| 代理商： | GFD50N03A |
Maximum Ratings and Thermal Characteristics
(T
C
= 25°C unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
V
DS
30
V
Gate-Source Voltage
Continuous Drain Current
(1)
V
GS
±
20
I
D
65
A
Pulsed Drain Current
I
DM
150
Maximum Power Dissipation
T
C
= 25°C
T
C
= 100°C
P
D
62.5
25.0
W
Operating Junction and Storage Temperature Range
T
J
, T
stg
–55 to 150
°C
Junction-to-Case Thermal Resistance
Junction-to-Ambient Thermal Resistance
(2)
R
θ
JC
2.0
°C/W
R
θ
JA
40
°C/W
Notes:
(1) Maximum DC current limited by the package.
(2) 1-in
2
2oz. Cu PCB mounted
GFD50N03
N-Channel Enhancement-Mode MOSFET
V
DS
30V
R
DS(ON)
9
m
I
D
65A
G
EN
F
ET
5/29/01
Features
Advanced Trench Process Technology
High Density Cell Design for Ultra Low On-Resistance
Specially Designed for Low Voltage DC/DC Converters
and motor drives
Fast Switching for High Efficiency
Mechanical Data
Case:
JEDEC TO-252 molded plastic body
Terminals:
Solder plated, solderable per
MIL-STD-750, Method 2026
High temperature soldering guaranteed:
250°C/10 seconds at terminals
Weight:
0.011oz., 0.4g
0.190
(4.826)
0.243
(6.172)
0.063
(1.6)
0.165
(4.191)
0.100
(2.54)
0.118
(3.0)
0.245 (6.22)
0.235 (5.97)
0.040 (1.02)
0.025 (0.64)
0.410 (10.41)
0.380 (9.65)
0.170 (4.32) min.
0.214 (5.44)
0.206 (5.23)
D
0.265 (6.73)
0.255 (6.48)
0.023 (0.58)
0.018 (0.46)
0.094 (2.39)
0.087 (2.21)
0.204 (5.18)
0.156 (3.96)
0.197 (5.00)
0.177 (4.49)
0.035 (0.89)
0.028 (0.71)
G
S
0.023 (0.58)
0.018 (0.46)
0.045 (1.14)
0.035 (0.89)
0.009 (0.23)
0.001 (0.03)
0.min.
0.060 (1.52)
0.045 (1.14)
0.050 (1.27)
0.035 (0.89)
TO-252 (DPAK)
Dimensions in inches
and (millimeters)
Mounting Pad Layout
G
D
S
T
RENCH
NewProduct
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