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參數(shù)資料
| 型號： | FZT692B |
| 廠商： | ZETEX PLC |
| 元件分類： | 功率晶體管 |
| 英文描述： | NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR |
| 中文描述： | 2 A, 70 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | SOT-223, 4 PIN |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 92K |
| 代理商： | FZT692B |
SOT223 NPN SILICON PLANAR MEDIUM
POWER HIGH GAIN TRANSISTOR
ISSUE 3 - OCTOBER 1995
FEATURES
*
High Gain + Very low saturation voltage
APPLICATIONS
*
Darlington replacement
*
Relay drivers, DC-DC converters
PARTMARKING DETAIL -
FZT692B
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j
:T
stg
70
V
Collector-Emitter Voltage
70
V
Emitter-Base Voltage
5
V
Peak Pulse Current
5
A
Continuous Collector Current
2
A
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
2
W
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C)
PARAMETER
SYMBOL MIN.
TYP. MAX.
UNIT TEST CONDITIONS.
BreakdownVoltages
V
(BR)CBO
70
V
I
C
=100
μ
A
I
C
=10mA*
I
E
=100
μ
A
V
CB
=55V
V
(BR)CEO
V
(BR)EBO
70
V
5
V
Cut-Off Currents
I
CBO
0.1
μ
A
μ
A
I
EBO
0.1
V
EB
=4V
Saturation Voltages
V
CE(sat)
0.15
0.5
0.5
V
V
V
I
C
=0.1A, I
=0.5mA*
I
C
=1A, I
B
=10mA*
I
C
=2A, I
B
=200mA*
I
C
=1A, I
B
=10mA*
I
C
=1A, V
CE
=2V*
V
BE(sat)
V
BE(on)
0.9
V
Base-Emitter
Turn-On Voltage
0.9
V
Static Forward Current
Transfer Ratio
h
FE
500
400
150
I
C
=100mA,V
CE
=2V*
I
C
=500mA, V
=2V*
I
C
=1A,V
CE
=2V*
I
C
=50mA, V
CE
=5V, f=50MHz
V
EB
=0.5V, f=1MHz
V
CB
=10V, f=1MHz
I
C
=500mA, I
B1
=50mA
I
B2
=50mA, V
CC
=10V
Transition Frequency
f
T
C
ibo
C
obo
t
on
t
off
150
MHz
Input Capacitance
200
pF
Output Capacitance
12
pF
Switching Times
46
1440
ns
ns
*Measured under pulsed conditions. Pulse width=300
μ
s. Duty cycle
≤
2%
Spice parameter data is available upon request for this device
FZT692B
C
C
E
B
3 - 223
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| FZT692B | 制造商:Diodes Incorporated 功能描述:TRANSISTOR NPN SOT-223 |
| FZT692BTA | 功能描述:達林頓晶體管 NPN High Gain & Crnt RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| FZT692BTC | 功能描述:達林頓晶體管 NPN High Gain & Crnt RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| FZT694 | 制造商:ZETEX 制造商全稱:ZETEX 功能描述:NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR |
| FZT694B | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:SOT223 NPN SILICON PLANAR MEDIUM |
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