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參數(shù)資料
| 型號： | FZE1658G |
| 廠商： | SIEMENS A G |
| 元件分類： | 模擬信號調(diào)理 |
| 英文描述： | 8 x Digital Sensor Interface |
| 中文描述： | SPECIALTY ANALOG CIRCUIT, PDSO24 |
| 文件頁數(shù)： | 4/18頁 |
| 文件大?。?/td> | 406K |
| 代理商： | FZE1658G |
FZE 1658G
Semiconductor Group
4
Functional Description and Application
The Integrated circuit FZE 1658G is used to detect the signal states of eight independent
input lines according to IEC 65A Type 2 (e.g. two-wire proximity switches) with a
common ground (GND). For operation in accordance with IEC 65A, it is necessary for
the device to be wired with resistors rated
R
V
= 820
and
R
EXT
= 4.4 k
with
±
2 %
tolerance and 200 ppm TK. The input device has the following characteristics:
– Minimization of power dissipation due to constant current characteristic
– Inputs protected against reverse polarity and transient overvoltages
– Status LED output for each input
– Digital averaging of the input signals to suppress interference pulses
– Serial output of the detected signals (cascadable)
Maximum voltage ratings at inputs D0 ... D7 within test circuit 2.
The rated voltage may be applied to all inputs simultaneously.
The values given in the table may be regarded as guaranteed, but are only checked as
part of a qualification (no 100 % series testing).
Within the application circuit given the same voltage ratings as above apply for the
supply line.
1)
Non-destructive in temperature range 15
°
C
≤
T
A
≤
35
°
C.
2)
In temperature range 15
°
C
≤
T
A
≤
35
°
C:
Data retained if the supply voltage remains within the operating range; without supply voltage
non-destructive.
Voltage Range
Notes
DC voltage
– 3 V … + 32 V
– 32 V … + 32 V
full function
non-destructive, no latch-up
Overvoltage 500 ms
– 3 V … + 35 V
– 35 V … + 35 V
full function
non-destructive, no latch-up
Overvoltage 1.3 ms
to VDE 0160
– 3 V … + 55 V
±
55
full function
non-destructive, no latch-up
Surge pulse 50
μ
s
to IEC 801-5,
Z
i
= 2
±
0.5 kV
1)
Burst pulse 50 ns
to IEC 801-4,
Z
i
= 50
±
2 kV
2)
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