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| 型號： | FZ24R12K4 |
| 英文描述： | IGBT Module |
| 中文描述： | IGBT模塊 |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 106K |
| 代理商： | FZ24R12K4 |
FZ 2400 R 12 KF4
Hchstzulssige Werte / Maximum rated values
Elektrische Eigenschaften / Electrical properties
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
t
vj
= 25°C
V
CES
I
C
I
CRM
P
tot
V
GE
I
F
I
FRM
V
ISOL
1200 V
Kollektor-Dauergleichstrom
DC-collector current
2400 A
Periodischer Kollektor Spitzenstrom
repetitive peak collctor current
t
p
=1 ms
t
C
=25°C, Transistor / Transistor
4800 A
Gesamt-Verlustleistung
total power dissipation
15 kW
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
± 20 V
Dauergleichstrom
DC forward current
2400 A
Periodischer Spitzenstrom
repetitive peak forw. current
t
p
=1ms
RMS, f=50 Hz, t= 1 min.
4800 A
Isolations-Prüfspannung
Charakteristische Werte / Characteristic values: Transistor
Kollektor-Emitter Sttigungsspannung
collector-emitter saturation voltage
insulation test voltage
2,5 kV
min.
typ.
max.
i
C
=2,4kA, v
GE
=15V, T
vj
=25°C
i
C
=2,4kA, v
GE
=15V, T
vj
=125°C
i
C
=96mA, v
CE
=v
GE
, T
vj
=25°C
f
O
=1MHz,T
vj
=25°C,v
CE
=25V, v
GE
=0V
v
CE
=1200V, v
GE
=0V, T
vj
=25°C
v
CE
=1200V, v
GE
=0V, T
vj
=125°C
v
CE sat
-
2,7
3,2 V
-
3,4
4 V
Gate-Schwellenspannung
Eingangskapazitt
gate threshold voltage
input capacity
v
GE(th)
C
ies
i
CES
4,5
5,5
170
6,5 V
- nF
-
Kollektor-Emitter Reststrom
collector-emitter cut-off current
-
-
48
240
- mA
- mA
Gate-Emitter Reststrom
gate leakage current
v
CE
=0V, v
GE
=20V, T
vj
=25°C
v
CE
=0V, v
GE
=20V, T
vj
=25°C
i
C
=2,4kA,v
CE
=600V,v
L
=±15V
V
LR
=15V,R
G
=0,47
, T
vj
=25°C
V
LR
=15V,R
G
=0,47
, T
vj
=125°C
i
C
=2,4kA,v
CE
=600V,v
L
=±15V
V
LR
=15V,R
G
=0,47
, T
vj
=25°C
V
LR
=15V,R
G
=0,47
, T
vj
=125°C
i
C
=2,4kA,v
CE
=600V,v
L
=±15V
V
LR
=15V,R
G
=0,47
, T
vj
=25°C
V
LR
=15V,R
G
=0,47
, T
vj
=125°C
i
GES
i
EGS
t
on
-
-
600 nA
Emitter-Gate Reststrom
gate leakage current
-
-
600 nA
Einschaltzeit (induktive Last)
turn-on time (inductive load)
-
-
0,7
0,8
- μs
- μs
Speicherzeit (induktive Last)
storage time (inductive load)
t
s
-
0,9
- μs
-
1,0
- μs
Fallzeit (induktive Last)
fall time (inductive load)
t
f
-
0,1
- μs
-
0,15
- μs
Charakteristische Werte / Characteristic values
Transistor / Transistor
Einschaltverlustenergie pro Puls
turn-on energy loss per pulse
i
C
=2,4kA,v
CE
=600V,v
L
=±15V
L
S
=40nH,R
G
=0,47
, T
vj
=125°C
i
C
=2,4kA,v
CE
=600V,v
L
=±15V
L
S
=40nH,R
G
=0,47
, T
vj
=125°C
i
F
=2400A, v
GE
=0V, T
vj
=25°C
i
F
=2400A, v
GE
=0V, T
vj
=125°C
i
F
=2,4kA, -di
F
/dt=12kA/μs
v
RM
=600V, v
EG
=10V, T
vj
=25°C
v
RM
=600V, v
EG
=10V, T
vj
=125°C
i
F
=2,4kA, -di
F
/dt=12kA/μs
v
RM
=600V, v
EG
=10V, T
vj
=25°C
v
RM
=600V, v
EG
=10V, T
vj
=125°C
E
on
-
- mWs
310
Abschaltverlustenergie pro Puls
turn-off energy loss per pulse
E
off
-
-
-
410
2,2
- mWs
2,7 V
2,5 V
Inversdiode / Inverse diode
Durchlaspannung
Rückstromspitze
forward voltage
v
F
2
peak reverse recovery current
I
RM
-
-
750
1200
- A
- A
Sperrverzgerungsladung
recovered charge
Q
r
-
-
80
270
- μAs
- μAs
Thermische Eigenschaften / Thermal properties
Innerer Wrmewiderstand
thermal resistance, junction to case
Transistor / transistor, DC
Diode /diode, DC
pro Module / per Module
R
thJC
0,0084 °C/W
0,014 °C/W
typ. 0,006 °C/W
150 °C
-40...+125 °C
-40...+125 °C
übergangs-Wrmewiderstand
Hchstzul. Sperrschichttemperatur
Betriebstemperatur
Lagertemperatur
thermal resistance, case to heatsink
max. junction temperature
operating temperature
storage temperature
R
thCK
T
vj max
T
c op
T
stg
Mechanische Eigenschaften / Mechanical properties
Innere Isolation
internal insulation
Al
2
O
3
Anzugsdrehmoment f. mech. Befestigungmounting torque
terminals M6 / tolerance ±15%
M1
5 Nm
Anzugsdrehmoment f. elektr. Anschlüsseerminal connection torque
terminals M4 / tolerance +5 / -10%
M2
2 Nm
terminals M8
8...10 Nm
Gewicht
weight
G
ca. 2300 g
Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt in Verbindung mit den
zugehrigen Technischen Erluterungen. This technical information specifies semiconductor devices but promises no characteristics. It is valid in
combination with the belonging technical notes.
Bedingung für den Kurzschluschutz / Conditions for short-circuit protection
t
fg
= 10 μs
V
CC
= 750 V
v
L
= ±15V
v
CEM
= 850 V
R
GF
= R
GR
= 0,47
i
CMK1
≈
15000 A
t
vj
= 125°C
i
CMK2
≈
13000 A
Unabhngig davon gilt bei abweichenden Bedingungen / with regard to other conditions v
CEM
= V
CES
- 12nH x |di
c
/dt|
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