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| 型號： | FZ1050R12K4 |
| 英文描述： | IGBT Module |
| 中文描述： | IGBT模塊 |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 98K |
| 代理商： | FZ1050R12K4 |
FZ 1050 R 12 KF4
Hchstzulssige Werte / Maximum rated values
Elektrische Eigenschaften / Electrical properties
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
V
CES
I
C
I
CRM
P
tot
V
GE
I
F
I
FRM
V
ISOL
1200 V
Kollektor-Dauergleichstrom
DC-collector current
1050 A
Periodischer Kollektor Spitzenstrom
repetitive peak collctor current
t
p
=1 ms
t
C
=25°C, Transistor /transistor
2100 A
Gesamt-Verlustleistung
total power dissipation
7 kW
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
± 20 V
Dauergleichstrom
DC forward current
1050 A
Periodischer Spitzenstrom
repetitive peak forw. current
t
p
=1ms
RMS, f=50 Hz, t= 1 min.
2100 A
Isolations-Prüfspannung
insulation test voltage
2,5 kV
Charakteristische Werte / Characteristic values: Transistor
Kollektor-Emitter Sttigungsspannung
min.
typ.
max.
collector-emitter saturation voltage
i
C
=1050A, v
GE
=15V, T
vj
=25°C
i
C
=1050A, v
GE
=15V, T
vj
=125°C
i
C
=42mA, v
CE
=v
GE
, T
vj
=25°C
f
O
=1MHz,T
vj
=25°C,v
CE
=25V,v
GE
=0V
v
CE sat
-
2,7
3,2 V
-
3,3
3,9 V
Gate-Schwellenspannung
gate threshold voltage
v
GE(th)
C
ies
i
CES
4,5
5,5
6,5 V
Eingangskapazitt
input capacity
-
80
- nF
Kollektor-Emitter Reststrom
collector-emitter cut-off current
v
CE
=1200V, v
GE
=0V, T
vj
=25°C
v
CE
=1200V, v
GE
=0V, T
vj
=125°C
-
-
14
85
- mA
- mA
Gate-Emitter Reststrom
gate leakage current
v
CE
=0V, v
GE
=20V, T
vj
=25°C
v
CE
=0V, v
EG
=20V, T
vj
=25°C
i
C
=1050A,v
CE
=600V,v
L
= ±15V
R
G
=1,0
, T
vj
=25°C
R
G
=1,0
, T
vj
=125°C
i
C
=1050A,v
CE
=600V,v
L
= ±15V
R
G
=1,0
, T
vj
=25°C
R
G
=1,0
, T
vj
=125°C
i
C
=1050A,v
CE
=600V,v
L
= ±15V
R
G
=1,0
, T
vj
=25°C
R
G
=1,0
, T
vj
=125°C
i
C
= 1050 A, v
CE
= 600 V, L
S
= 70 nH E
on
V
L
= ±15 V, R
G
= 1,0
, T
vj
= 125°C
i
C
= 1050 A, v
CE
= 600 V, L
S
= 70 nH E
off
V
L
= ±15 V, R
G
= 1,0
, T
vj
= 125°C
i
GES
i
EGS
t
on
-
400 nA
Emitter-Gate Reststrom
gate leakage current
-
400 nA
Einschaltzeit (ohmsche Last)
turn-on time (resistive load)
-
0,7
- μs
-
0,8
- μs
Speicherzeit (induktive Last)
storage time (inductive load)
t
s
-
0,9
- μs
-
1
- μs
Fallzeit (induktive Last)
fall time (inductive load)
t
f
-
0,1
- μs
-
0,15
- μs
Einschaltverlustenergie pro Puls
turn-on energy loss per pulse
-
150
- mWs
Abschaltverlustenergie pro Puls
turn-off energy loss per pulse
-
170
- mWs
Charakteristische Werte / Characteristic values: Invers-Diode
Durchlaspannung
forward voltage
i
F
=1050A, v
GE
=0V, T
vj
=25°C
i
F
=1050A, v
GE
=0V, T
vj
=125°C
i
F
=1050A, -di
F
/dt=5,5kA/μs
v
RM
=600V, v
EG
=10V, T
vj
=25°C
v
RM
=600V, v
EG
=10V, T
vj
=125°C
i
F
=1050A, -di
F
/dt=5,5kA/μs
v
RM
=600V, v
EG
=10V, T
vj
=25°C
v
RM
=600V, v
EG
=10V, T
vj
=125°C
V
F
-
2,2
2,7 V
-
2
2,5 V
Rückstromspitze
peak reverse recovery current
I
RM
-
350
- A
-
620
- A
Sperrverzgerungsladung
recovered charge
Q
r
-
45
- μAs
-
135
- μAs
Thermische Eigenschaften / Thermal properties
Innerer Wrmewiderstand
thermal resistance, junction to case
Transistor / transistor, DC
R
thJC
0,018 °C/W
Diode /diode, DC
0,036 °C/W
übergangs-Wrmewiderstand
thermal resistance, case to heatsink
pro Module / per Module
R
thCK
T
vj max
T
c op
T
stg
typ. 0,008 °C/W
Hchstzul. Sperrschichttemperatur
max. junction temperature
150 °C
Betriebstemperatur
operating temperature
-40...+150 °C
Lagertemperatur
Mechanische Eigenschaften / Mechanical properties
Innere Isolation
storage temperature
-40...+125 °C
internal insulation
Al
2
O
3
Anzugsdrehmoment f. mech. Befestigung mounting torque
M1
3 Nm
Anzugsdrehmoment f. elektr. Anschlüsse terminal connection torque
terminals M4
M2
2 Nm
terminals M8
8...10 Nm
Gewicht
weight
G
ca.1500 g
Bedingung für den Kurzschluschutz / Conditions for short-circuit protection
t
fg
= 10 μs
V
CC
= 750 V
v
L
= ±15 V
v
CEM
= 900 V
R
GF
= R
GR
= 1,0
i
CMK1
≈
9000 A
T
vj
= 125°C
i
CMK2
≈
7000 A
Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt in Verbindung mit den
zugehrigen Technischen Erluterungen. This technical information specifies semiconductor devices but promises no characteristics. It is valid in
combination with the belonging technical notes.
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