參數(shù)資料
型號(hào): FW250
廠商: Sanyo Electric Co.,Ltd.
英文描述: N-Channl Silicon MOSFET Ultrahigh-Speed Switching Applications
中文描述: ? - Channl硅MOSFET的超高速開關(guān)應(yīng)用
文件頁數(shù): 3/4頁
文件大?。?/td> 30K
代理商: FW250
FW250
No.7548-3/4
F
Diode Forward Voltage, VSD -- V
Ciss, Coss, Crss -- VDS
Total Gate Charge, Qg -- nC
PD -- Ta
Mounted on a ceramic board(2000mm
2
0.8mm),
C
S
Drain-to-Source Voltage, VDS -- V
A S O
Drain Current, ID -- A
VGS -- Qg
G
Drain Current, ID -- A
SW Time -- ID
F
y
f
Drain-to-Source Voltage, VDS -- V
D
Ambient Temperature, Ta --
°
C
A
0
100
1000
10
5
7
2
3
5
7
2
3
60
20
30
40
50
10
IT06048
2
3
5
7
2
3
5
7
2
3
5
7
5
3
2
10
1.0
0.1
0.01
2
3
5
7
2
3
5
7
0.1
1.0
10
2
3
5
7100
IT06050
10
1.0
0.1
1.0
2
3
5
7
10
2
3
5
7
3
5
2
7
3
5
2
7
100
IT06047
IT06046
0.6
0.8
0.4
1.0
1.2
IF -- VSD
0
0
8
7
9
10
8
7
9
6
5
2
1
4
3
10
2
1
4
3
6
5
IT06049
IT06045
0.01
1.0
0.1
2
3
5 7
1.0
2
3
5
7
2
3
5 710
7
5
3
2
0.1
5
7
3
2
10
y
fs
-- ID
0
0.2
0.01
10
1.0
0.1
7
5
3
2
7
5
3
2
7
5
3
2
VGS=0
VDD=30V
VGS=10V
tf
tr
td(off)
Operation in this area
is limited by RDS(on).
IDP=20A
ID=3A
10
μ
s
100
μ
s
1ms
10ms
DCopeaion
100ms
10s
VDS=10V
Ta=-25
C
75
C
25
C
T7
C
2
C
-
C
td(on)
Crss
Coss
Ciss
f=1MHz
VDS=30V
ID=3A
Ta=25
°
C
Single pulse
Mounted on a ceramic board(2000mm
2
0.8mm) 1unit
0
0
20
40
60
80
100
120
1.5
1.0
0.5
2.5
2.0
2.2
1.8
140
160
IT06051
1unt
Ttldsipton
PW
10s
相關(guān)PDF資料
PDF描述
FW257 N CHANNEL MOS SILICON TRANSISTOR
FW261 N CHANNEL MOS SILICON TRANSISTOR
FW262 N-Channel Silicon MOSFET
FW306 N- Channel Silicon MOS FET High Speed Switching
FW307 Ultrahigh-Speed Switching Applications
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