參數(shù)資料
型號(hào)： FW307
廠商： Sanyo Electric Co.,Ltd.
英文描述： Ultrahigh-Speed Switching Applications
中文描述： 超高速開關(guān)應(yīng)用
文件頁數(shù)： 1/5頁
文件大?。?/td> 44K
代理商： FW307
FW307
No.7274-1/5
Specifications
Absolute Maximum Ratings
at Ta=25
°
C
Parameter
Symbol
Conditions
Ratings
Unit
N-channel
P-channel
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Total Dissipation
Channel Temperature
Storage Temperature
VDSS
VGSS
ID
IDP
PD
PT
Tch
Tstg
250
±
30
--250
±
30
--0.7
V
V
A
A
W
W
°
C
°
C
1
5
PW
≤
10
μ
s, duty cycle
≤
1%
Mounted on a ceramic board (900mm
2
0.8mm)1unit
Mounted on a ceramic board (900mm
2
0.8mm)
--3
1.7
2.0
150
--55 to +150
Electrical Characteristics
at Ta=25
°
C
Ratings
typ
Parameter
Symbol
Conditions
min
max
Unit
[N-channel]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Gate-to-Source Leakage Current
V(BR)DSS
IDSS
IDSS
IGSS
IGSS
ID=1mA, VGS=0
VDS=250V, VGS=0
VDS=15V, VGS=0, Ta=0 to 60
°
C
VGS=
±
25V, VDS=0
VGS=
±
15V, VDS=0, Ta=0 to 60
°
C
250
V
μ
A
μ
A
μ
A
μ
A
100
4
±
10
±
1.2
Continued on next page.
Features
The FW307 incorporates an N-channel MOSFET and a
P-channel MOSFET that feature low ON-resistance and
high-speed switching, thereby enabling high-density
mounting.
Excellent ON-resistance characteristic.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN7274
FW307
Package Dimensions
unit : mm
2129
[FW307]
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
N-Channel and P-Channel Silicon MOSFETs
Ultrahigh-Speed Switching Applications
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
SANYO : SOP8
1
4
5
8
4
0
6
0.2
5.0
0.595
1.27
1
0
1
0.43
83002 TS IM TA-1265
Preliminary
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