
ROHS Compliant
1.5 mA
0.74 Volts
2300 pF
*Add Suffix A for Common Anode, D for Doubler
*Pulse test: Pulse width 300sec, Duty cycle 2%
30 mA
0.56 Volts
1200 Amps
60 Amps
120 Amps
Electrical Characteristics
2 Amps
Schottky Powermod
FST6035 - FST6050
Thermal and Mechanical Characteristics
Typical junction capacitance per leg
Max peak reverse current per leg
Maximum repetitive reverse current per leg
Max peak forward voltage per leg
Maximum surge current per leg
Average forward current per leg
Average forward current per pkg
Max peak forward voltage per leg
Typical thermal resistance (greased)
Mounting Torque
Weight
R CS
0
Operating junction temp range
Max thermal resistance per leg
Max thermal resistance per pkg
Storage temp range
RM
T
R
T
JC
0
J
0
STG
CJ
F(AV)
I
R(OV)
FSM
VFM
V
I
RM
FM
I
F(AV)
I
50V
45V
40V
35V
Reverse Voltage
Working Peak
Catalog Number
FST6050*
FST6045*
FST6040*
FST6035*
Microsemi
Repetitive Peak
Reverse Voltage
45V
50V
40V
35V
C = 135°C, square wave,
0JC = 0.6°C/W
2.5 ounces (71 grams) typical
0.1°C/W
15 - 20 inch pounds
Case to sink
f = 1 KHz, 25°C, 1sec square wave
R = 5.0V, C = 25°C
RRM, J = 25°C
FM = 60A: J = 25°C*
FM = 60A: J = 175°C*
8.3ms, half sine, J = 175°C
C = 135°C, square wave,
0JC = 1.0°C/W
RRM, J = 125°C*
-55°C to 175°C
1.0°C/W
-55°C to 175°C
0.6°C/W
V
T
I
V
I
T
Junction to case
R
T
R
Common Cathode
A=Common Anode
D=Doubler
Baseplate: Nickel plated copper;
M
9 Pins eq at .150
1.200
H
L
G
F
electrically isolated
Pins: Nickel plated copper
K
Notes:
J
P
1
2
1
2
C
1
3
2
A
N 4-PLCS.
E
1
2
Square
to Lead C
Minimum Maximum Minimum Maximum Notes
12.83
12.57
0.495
C
0.506
1.010
0.052
0.195
0.130
0.260
0.510
0.400
1.510
2.410
K
3
N
P
M
L
3
G
J
H
F
E
0.240
0.175
0.032
0.040
0.490
0.990
---
0.120
1.490
2.390
25.15
0.81
4.45
1.02
37.85
3.05
6.10
12.45
---
60.71
.050
6.60
1.27
1.32
4.95
12.95
25.65
3.30
10.16
38.35
61.21
2.005
Dim. Inches
3
A
1.995
Millimeter
50.67
50.93
L
Dia
Reverse Energy Tested
V
High surge capacity
RRM 35 to 50 Volts
Schottky Barrier Rectifier
Guard Ring for Reverse Protection
January, 2010 - Rev. 4
www.microsemi.com