
*Add the Suffix A for Common Anode, D for Doubler
ROHS Compliant
O
R
Storage temp range
Operating junction temp range
T
Electrical Characteristics
Thermal and Mechanical Characteristics
Average Forward Current
Maximum Surge Current
Max. Peak Forward Voltage
F(AV)
FSM
FM
RM
I
V
I
T
V
Max thermal resistance
Weight
F(AV)
I
Average Forward Current
J
Typical Junction Capacitance per leg
C
8.3ms, half sine,T
= 175°C
I
RRM,
J = 125°C
RRM,
J = 25°C
V
R = 5.0V,
J = 25°C
T
V
15-20 inch pounds
per leg
Max thermal resistance per pkg.
Low Vf Schottky Powermod
200 Amps
100 Amps
per pkg.
per leg
Max. Peak Forward Voltage
J
1500 Amps
.55 Volts
FM
V
.70 Volts
100 mA
T
= 136°C, Square wave,
0JC = 0.7°C/W
T
= 136°C, Square wave,
0JC = 0.35°C/W
FM = 100A: J = 175°C
FM = 100A, J = 25°C
R
4 mA
C 4800 pF
Max. Peak Reverse Current per leg
STG
J
JC
0.7°C/W
0.35°C/W
-55°C to 175°C
JC
O
R
Mounting Torque
2.3 ounces (58.5 grams) typical
*Pulse test: Pulse width 300sec, Duty cycle 2%
*
FST19035 - FST19050
35V
FST19035*
40V
Voltage
Peak Reverse
Working Peak
Repetitive Peak
Peak Reverse
Voltage
40V
FST19040*
Number
Catalog
Microsemi
FST19045*
FST19050*
45V
50V
45V
50V
Typical thermal resistance (greased)
JC
0.1°C/W
Case to sink
O
R
Junction to case
Pins: Nickel plated copper
D=Doubler
A=Common Anode
Common Cathode
H
F
R
G
P
M
L
Q
J
D
Baseplate: Nickel plated copper;
electrically isolated
Notes:
K
1
2
1
2
B
2
A
C
1
3
E
N 4 Places
1
2
Dia.
Notes
to Lead C
1.010
2.410
0.130
0.400
1.525
0.350
0.510
0.045
0.455
0.195
0.260
0.910
R 0.890
TO-249
3
K 0.240
0.330
0.035
0.445
0.490
N 0.175
Q
P
M
L
0.990
2.390
G 1.500
0.120
---
J
H
F
E
23.11
22.61
6.10
12.45
11.30
4.45
0.89
8.38
25.15
60.71
---
38.10
3.05
6.60
6.90
4.95
1.14
11.56
12.95
25.65
61.21
3.30
10.16
38.70
2.005
Max.
0.325
0.505
0.192
Dim. Inches
3
0.300
0.495
0.182
C
D
B
1.995
Min.
A
Millimeters
50.67
12.57
7.62
4.62
Min.
50.93
8.26
12.83
Max.
4.88
L
Schottky Barrier Rectifier
Electrically Isolated Base
Reverse Energy Tested
RRM 35 to 50 Volts
Guard Ring Protection
Low Forward Voltage
V
January, 2010 - Rev. 3
www.microsemi.com