參數(shù)資料
型號(hào)： FSGYC164D1
英文描述： TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 69A I(D) | SMT
中文描述： 晶體管| MOSFET的| N溝道| 150伏五（巴西）直| 69A條（丁）|貼片
文件頁(yè)數(shù)： 2/7頁(yè)
文件大?。?/td> 109K
代理商： FSGYC164D1
2001 Fairchild Semiconductor Corporation
FSGYC063R Rev. B
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
FSGYC063R
30
30
UNITS
V
V
Drain to Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DS
Drain to Gate Voltage (R
GS
= 20k
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
Continuous Drain Current
T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
T
C
= 100
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
Maximum Power Dissipation
T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
T
T
C
= 100
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
T
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulsed Avalanche Current, L = 100
μ
H, (See Test Figure) . . . . . . . . . . . . . . . . . . . . . . I
AS
Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
S
Pulsed Source Current (Body Diode). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
SM
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
(Distance >0.063in (1.6mm) from Case, 10s Max)
Weight (Typical) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
70
70
200
±
24
A
A
A
V
208
83
1.67
180
70
200
W
W
W/
o
C
A
A
A
o
C
o
C
-55 to 150
300
3.3 (Typical)
g
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Current is limited by the package capability.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
V
GS(TH)
I
D
= 1mA, V
GS
= 0V
V
GS
= V
DS
,
I
D
= 1mA
30
-
-
V
Gate Threshold Voltage
T
C
= -55
o
C
T
C
= 25
o
C
T
C
= 125
o
C
T
C
= 25
o
C
T
C
= 125
o
C
T
C
= 25
o
C
T
C
= 125
o
C
-
-
5.5
V
2.0
-
4.5
V
1.0
-
-
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 24V,
V
GS
= 0V
-
-
25
μ
A
μ
A
-
-
250
Gate to Source Leakage Current
I
GSS
V
GS
=
±
30V
±
24V
-
-
100
nA
-
-
200
nA
Drain to Source On-State Voltage
V
DS(ON)
r
DS(ON)12
V
GS
= 12V, I
D
= 70A
I
D
= 70A,
V
GS
= 12V
-
-
0.280
V
Drain to Source On Resistance
T
C
= 25
o
C
T
C
= 125
o
C
-
0.0035
0.004
-
-
0.006
Turn-On Delay Time
t
d(ON)
t
r
t
d(OFF)
t
f
Q
g(12)
Q
gs
Q
gd
Q
g(20)
Q
g(TH)
V
(PLATEAU)
C
ISS
C
OSS
C
RSS
R
θ
JC
V
DD
= 15V, I
D
= 70A,
R
L
= 0.21
, V
GS
= 12V,
R
GS
= 2.35
-
-
40
ns
Rise Time
-
-
100
ns
Turn-Off Delay Time
-
-
70
ns
Fall Time
-
-
20
ns
Total Gate Charge
V
GS
= 0V to 12V
V
DD
= 15V,
I
D
= 70A
-
115
135
nC
Gate Charge Source
-
40
55
nC
Gate Charge Drain
-
20
30
nC
Gate Charge at 20V
V
GS
= 0V to 20V
V
GS
= 0V to 2V
I
D
= 70A, V
DS
= 15V
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
-
225
-
nC
Threshold Gate Charge
-
17
-
nC
Plateau Voltage
-
5.5
-
V
Input Capacitance
-
8100
-
pF
Output Capacitance
-
5100
-
pF
Reverse Transfer Capacitance
-
90
-
pF
Thermal Resistance Junction to Case
-
-
0.60
o
C/W
FSGYC063R
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