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參數資料
| 型號： | FSGYC164R4 |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 69A I(D) | SMT |
| 中文描述： | 晶體管| MOSFET的| N溝道| 150伏五（巴西）直| 69A條（?。﹟貼片 |
| 文件頁數： | 1/7頁 |
| 文件大小： | 109K |
| 代理商： | FSGYC164R4 |
2001 Fairchild Semiconductor Corporation
FSGYC063R Rev. B
FSGYC063R
Radiation Hardened, SEGR Resistant
N-Channel Power MOSFETs
Fairchild Star*Power Rad Hard
MOSFETs have been specifically
developed for high performance
applications in a commercial or
military space environment.
Star*Power MOSFETs offer the system designer both
extremely low r
DS(ON)
and Gate Charge allowing the
development of low loss Power Subsystems. Star*Power
radiation hardness up to 100K RADs while maintaining the
guaranteed performance for Single Event Effects (SEE)
which the Fairchild FS families have always featured.
The Fairchild family of Star*Power FETs includes a series of
devices in various voltage, current and package styles. The
portfolio consists of Star*Power and Star*Power Gold
products. Star*Power FETs are optimized for total dose and
r
DS(ON)
while exhibiting SEE capability at full rated voltage
up to an LET of 37. Star*Power Gold FETs have been
optimized for SEE and Gate Charge combining SEE
performance to 80% of the rated voltage for an LET of 82
with extremely low gate charge characteristics.
This MOSFET is an enhancement-mode silicon-gate power
field effect transistor of the vertical DMOS (VDMOS)
structure. It is specifically designed and processed to be
radiation tolerant. The MOSFET is well suited for
applications exposed to radiation environments such as
switching regulation, switching converters, power
distribution, motor drives and relay drivers as well as other
power control and conditioning applications. As with
conventional MOSFETs these Radiation Hardened
MOSFETs offer ease of voltage control, fast switching
speeds and ability to parallel switching devices.
Reliability screening is available as either TXV or Space
equivalent of MIL-PRF-19500.
Formerly available as type TA45223W.
Features
70A
, 30V, r
DS(ON)
= 0.004
UIS Rated
Total Dose
- Meets Pre-RAD Specifications to 100K RAD (Si)
Single Event
- Safe Operating Area Curve for Single Event Effects
- SEE Immunity for LET of 82MeV/mg/cm
2
with
V
DS
up to 80% of Rated Breakdown
Dose Rate
- Typically Survives 3E9 RAD (Si)/s at 80% BV
DSS
- Typically Survives 2E12 if Current Limited to I
AS
Photo Current
- 3nA Per-RAD (Si)/s Typically
Neutron
- Maintain Pre-RAD Specifications
for 3E13 Neutrons/cm
2
- Usable to 3E14 Neutrons/cm
2
Symbol
Packaging
SMD2
Current is limited by the package capability
Ordering Information
RAD LEVEL
SCREENING LEVEL
PART NUMBER/BRAND
10K
Engineering samples
FSGYC063D1
100K
TXV
FSGYC063R3
100K
Space
FSGYC063R4
TM
D
G
S
Data Sheet
December 2001
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| FSGYC264D1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 44A I(D) | SMT |
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