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參數(shù)資料
| 型號： | FSGJ063R3 |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 70A I(D) | TO-254AA |
| 中文描述： | 晶體管| MOSFET的| N溝道| 30V的五（巴西）直| 70A條（?。﹟對254AA |
| 文件頁數(shù)： | 4/7頁 |
| 文件大小： | 104K |
| 代理商： | FSGJ063R3 |
2001 Fairchild Semiconductor Corporation
FSGJ063R Rev. B
FIGURE 3. TYPICAL DRAIN INDUCTANCE REQUIRED TO
LIMIT GAMMA DOT CURRENT TO I
AS
FIGURE 4. MAXIMUM CONTINUOUS DRAIN CURRENT vs
TEMPERATURE
FIGURE 5. FORWARD BIAS SAFE OPERATING AREA
FIGURE 6. BASIC GATE CHARGE WAVEFORM
FIGURE 7. TYPICAL NORMALIZED r
DS(ON)
vs JUNCTION
TEMPERATURE
FIGURE 8. TYPICAL OUTPUT CHARACTERISTICS
Performance Curves
(Continued)
300
100
10
L
DRAIN SUPPLY (V)
1000
ILM = 10A
300A
1E-4
1E-5
1E-6
30
100A
30A
1E-7
1E-3
I
D
,
T
C
, CASE TEMPERATURE (
o
C)
150
100
50
0
-50
0
20
40
30
10
100
90
80
70
60
50
100
10
1
0.1
1
10
100
500
I
D
,
D
V
DS
,
DRAIN TO SOURCE VOLTAGE (V)
100
μ
s
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
10ms
1ms
T
C
= 25
o
C
100ms
CHARGE
Q
GD
Q
G
V
G
Q
GS
12V
2.5
2.0
1.5
1.0
0.5
0.0
-80
-40
0
40
80
120
160
N
D
T
J
,
JUNCTION TEMPERATURE (
o
C)
PULSE DURATION = 250ms, V
GS
= 12V, I
D
= 70A
10
8
6
4
2
0
0
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
,
80
40
V
GS
= 6V
V
GS
= 8V
V
GS
= 10V
V
GS
= 12V
V
GS
= 14V
120
160
200
V
GS
= 6V
FSGJ063R
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