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參數(shù)資料
| 型號(hào)： | FSGJ063R3 |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 70A I(D) | TO-254AA |
| 中文描述： | 晶體管| MOSFET的| N溝道| 30V的五（巴西）直| 70A條（丁）|對(duì)254AA |
| 文件頁(yè)數(shù)： | 3/7頁(yè) |
| 文件大小： | 104K |
| 代理商： | FSGJ063R3 |
2001 Fairchild Semiconductor Corporation
FSGJ063R Rev. B
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Forward Voltage
V
SD
t
rr
Q
RR
I
SD
= 70A
I
SD
= 70A, dI
SD
/dt = 100A/
μ
s
-
-
1.2
V
Reverse Recovery Time
-
-
140
ns
μ
C
Reverse Recovery Charge
-
0.32
-
Electrical Specifications up to 100 krad
T
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
MAX
UNITS
Drain to Source Breakdown Volts
(Note 3)
BV
DSS
V
GS(TH)
I
GSS
I
DSS
V
DS(ON)
r
DS(ON)12
V
GS
= 0, I
D
= 1mA
V
GS
= V
DS
, I
D
= 1mA
V
GS
=
±
24V, V
DS
= 0V
V
GS
= 0, V
DS
= 24V
V
GS
= 12V, I
D
= 70A
V
GS
= 12V, I
D
= 70A
30
-
V
Gate to Source Threshold Volts
(Note 3)
2.0
4.5
V
Gate to Body Leakage
(Notes 2, 3)
-
100
nA
μ
A
V
Zero Gate Leakage
(Note 3)
-
25
Drain to Source On-State Volts
(Notes 1, 3)
-
0.329
Drain to Source On Resistance
(Notes 1, 3)
-
0.0047
NOTES:
1. Pulse test, 300
μ
s Max.
2. Absolute value.
3. Insitu Gamma bias must be sampled for both V
GS
= 12V, V
DS
= 0V and V
GS
= 0V, V
DS
= 80% BV
DSS
.
Single Event Effects (SEB, SEGR)
Note 4
TEST
SYMBOL
ENVIRONMENT
(NOTE 5)
APPLIED
V
GS
BIAS
(V)
(NOTE 7)
MAXIMUM
V
DS
BIAS
(V)
(NOTE 6
)
TYPICAL LET
(MeV/mg/cm)
TYPICAL RANGE (
μ
)
36
Single Event Effects Safe Operating Area
SEESOA
37
-5
30
60
32
-2
30
60
32
-5
22.5
82
28
0
24
82
28
-2
22.5
NOTES:
4. Testing conducted at Brookhaven National Labs or Texas A&M.
5. Fluence = 1E5 ions/cm
2
(Typ), T = 25
o
C.
6. Ion Species: LET = 37, Br or Kr; LET = 60, I or Xe; LET = 82, Au.
7. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR).
Performance Curves
FIGURE 1. SINGLE EVENT EFFECTS SAFE OPERATING AREA
FIGURE 2. TYPICAL SEE SIGNATURE CURVE
0
0
-5
V
D
V
GS
(V)
LET = 60MeV/mg/cm
2
, RANGE = 32
μ
LET = 82MeV/mg/cm
2
, RANGE = 28
μ
LET = 37MeV/mg/cm
2
, RANGE = 36
μ
40
10
20
30
-7
-6
-4
-3
-2
-1
TEMP = 25
o
C
40
0
0
V
D
LET = 82
LET = 60
30
20
10
4
8
12
V
GS
(V)
16
20
24
LET = 37
FSGJ063R
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