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參數(shù)資料
| 型號： | FSC110R |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | CHIP |
| 中文描述： | 晶體管| MOSFET的| N溝道| 100V的五（巴西）決策支持系統(tǒng)|芯片 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大小： | 51K |
| 代理商： | FSC110R |
2001 Fairchild Semiconductor Corporation
FSC110R Rev. A
FSC110R
Radiation Hardened, SEGR Resistant
N-Channel Power MOSFET
Features
100V, 3.5A
Total Dose
- Meets Pre-RAD Specifications to 100K RAD (Si)
(Note), 0.600
Single Event
- SEE Immunity for 1E5 ions/cm
36MeV/mg/cm
80% of Rated Breakdown and V
2
having an LET of
μ
m with V
GS
of 10V Off-Bias
2
and a Range of 36
DS
up to
Dose Rate
- Typically Survives 3E9 RAD (Si)/s at 80% BV
- Typically Survives 2E12 if Current Limited to I
DSS
DM
Photo Current
- 0.3nA Per-RAD(Si)/s Typically
Neutron
- Maintain Pre-RAD Specifications
for 3E13 Neutrons/cm
- Usable to 3E14 Neutrons/cm
2
2
NOTE: Current rating defined for TO-205AF package.
Symbol
Ordering Information
RAD LEVEL
SCREENING LEVEL
PART NUMBER/BRAND
100K
JANKC
FSC110R
D
G
S
Data Sheet
April 1999
File Number
4679
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