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參數(shù)資料
| 型號(hào)： | FSC110R |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | CHIP |
| 中文描述： | 晶體管| MOSFET的| N溝道| 100V的五（巴西）決策支持系統(tǒng)|芯片 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大小： | 51K |
| 代理商： | FSC110R |
2001 Fairchild Semiconductor Corporation
FSC110R Rev. A
Pre Radiation Electrical Specifications
T
C
= 25
o
C, the Chip is 100% Probed to the Actual Conditions and Limits Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
I
D
= 1mA, V
GS
= 0V
100
-
-
V
Gate to Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 1mA
1.5
-
4.0
V
Gate to Body Leakage Forward
I
GSSF
V
GS
= +20V
-
-
100
nA
Gate to Body Leakage Reverse
I
GSSR
V
GS
= -20V
-
-
100
nA
Drain Current
I
DSS
V
DS
= 80V, V
GS
= 0V
-
-
0.025
mA
Diode Forward Voltage
V
SD
I
D
= 3.5A, V
GD
= 0V
-
0.6
1.8
V
Drain to Source On Resistance
r
DS(ON)
I
D
= 12VA, V
GS
= 12V
-
-
0.600
Post Radiation Electrical Specifications
T
Devices
C
= 25
o
C, Unless Otherwise Specified. Testing Performed on TO-205AF Packaged
PARAMETER
SYMBOL
NOTES
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
3, 4
V
GS
= 0V, I
D
= 1mA
100
-
-
V
Gate to Source Threshold Voltage
V
GS(TH)
3, 4
V
GS
= V
DS
, I
D
= 1mA
1.5
-
4.0
V
Gate to Body Leakage
I
GSS
2, 3, 4
V
GS
=
±
20V, V
DS
= 0V
-
-
100
nA
Zero to Gate Voltage Drain Current
I
DSS
3, 4
V
GS
= 0V, V
DS
= 80V
-
-
25
μ
A
Drain to Source On Resistance
r
DS(ON)
1, 3, 4
V
GS
= 12V, I
D
= 2.5A
-
-
0.600
Diode to Source On-State Voltage
V
DS(ON)
1, 3, 4
V
GS
= 12V, I
D
= 3.5A
-
-
2.21
V
NOTES:
1. Pulse test, 300
2. Absolute value.
3. Gamma = 100K RAD (Si).
4. Insitu Gamma bias must be sampled for both V
μ
s max.
GS
= +12V, V
DS
= 0V and V
GS
= 0V, V
DS
= 80% BV
DSS
.
Single Event Effects (SEE)
Note 5
TEST
SYMBOL
ENVIRONMENT
(NOTE 6)
APPLIED
V
GS
BIAS
(V)
(NOTE 7)
MAXIMUM
V
DS
BIAS (V)
ION
SPECIES
TYPICAL LET
(MeV/mg/cm
2
)
TYPICAL
RANGE (
μ
)
Single Event Effects Safe Operating Area
SEESOA
Ni
26
43
-20
100
Br
37
36
-10
100
Br
37
36
-15
80
Br
37
36
-20
50
NOTES:
5. Testing conducted at Brookhaven National Labs; sponsored by Naval Surface Warfare Center (NSWC), Crane, IN.
6. Fluence = 1E5 ions/cm
(typical), T = 25
C.
7. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR).
2
o
FSC110R
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