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參數(shù)資料
| 型號： | FRM9130D |
| 廠商： | INTERSIL CORP |
| 元件分類： | JFETs |
| 英文描述： | 6A, -100V, 0.550 Ohm, Rad Hard, P-Channel Power MOSFETs |
| 中文描述： | 6 A, 100 V, 0.55 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AA |
| 文件頁數(shù)： | 2/6頁 |
| 文件大小： | 57K |
| 代理商： | FRM9130D |
4-2
Pre-Radiation Electrical Specications TC = +25oC, Unless Otherwise Specied
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN
MAX
Drain-Source Breakdown Volts
BVDSS
VGS = 0, ID = 1mA
-100
-
V
Gate-Threshold Volts
VGS(th)
VDS = VGS, ID = 1mA
-2.0
-4.0
V
Gate-body Leakage Forward
IGSSF
VGS = -20V
-
100
nA
Gate-Body Leakage Reverse
IGSSR
VGS = +20V
-
100
nA
Zero-Gate Voltage
Drain Current
IDSS1
IDSS2
IDSS3
VDS = -100V, VGS = 0
VDS = -80V, VGS = 0
VDS = -80V, VGS = 0, TC = +125oC
-
1
0.025
0.25
mA
Rated Avalanche Current
IAR
Time = 20
s
-
18
A
Drain-Source On-State Volts
VDS(on)
VGS = -10V, ID = 6A
-
-3.47
V
Drain-source On Resistance
RDS(on)
VGS = -10V, ID = 4A
-
.550
Turn-On Delay Time
td(on)
VDD = -50V, ID = 6A
-
48
ns
Rise Time
tr
Pulse Width = 3
s
-
220
Turn-Off Delay Time
td(off)
Period = 300
s, Rg = 25
-
128
Fall Time
tf
0
≤ VGS ≤ 10 (See Test Circuit)
-
74
Gate-Charge Threshold
QG(th)
VDD = -50V, ID = 6A
IGS1 = IGS2
0
≤ VGS ≤ 20
14
nc
Gate-Charge On State
QG(on)
16
66
Gate-Charge Total
QGM
33
134
Plateau Voltage
VGP
-3
-12
V
Gate-Charge Source
QGS
3
12
nc
Gate-Charge Drain
QGD
7
28
Diode Forward Voltage
VSD
ID = 6A, VGD = 0
-0.6
-1.8
V
Reverse Recovery Time
TT
I = 6A; di/dt = 100A/
s
-
300
ns
Junction-To-Case
R
θjc
-
1.67
oC/W
Junction-To-Ambient
R
θja
Free Air Operation
-
60
FIGURE 1. RESISTIVE SWITCHING TEST CIRCUIT
FIGURE 2. UNCLAMPED ENERGY TEST CIRCUIT
VDD
RL
VDS
DUT
RGS
0V
VGS = -12V
tP
VGS ≤ 20V
L
+
-
VDS
VDD
DUT
VARY tP TO OBTAIN
REQUIRED PEAK IAS
0V
50
50
50V-150V
IAS
+
-
ELECTRONIC SWITCH OPENS
WHEN IAS IS REACHED
CURRENT
TRANSFORMER
FRM9130D, FRM9130R, FRM9130H
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FRM9130H | 6A, -100V, 0.550 Ohm, Rad Hard, P-Channel Power MOSFETs |
| FRM9130R | 6A, -100V, 0.550 Ohm, Rad Hard, P-Channel Power MOSFETs |
| FRM9140D | 11A, -100V, 0.300 Ohm, Rad Hard, P-Channel Power MOSFETs |
| FRM9140H | 11A, -100V, 0.300 Ohm, Rad Hard, P-Channel Power MOSFETs |
| FRM9140R | 11A, -100V, 0.300 Ohm, Rad Hard, P-Channel Power MOSFETs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FRM9130H | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:6A, -100V, 0.550 Ohm, Rad Hard, P-Channel Power MOSFETs |
| FRM9130R | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:6A, -100V, 0.550 Ohm, Rad Hard, P-Channel Power MOSFETs |
| FRM9130R4 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 6A I(D) | TO-204AA |
| FRM9140D | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:11A, -100V, 0.300 Ohm, Rad Hard, P-Channel Power MOSFETs |
| FRM9140H | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:11A, -100V, 0.300 Ohm, Rad Hard, P-Channel Power MOSFETs |
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