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參數(shù)資料
| 型號： | FRM9130D |
| 廠商： | INTERSIL CORP |
| 元件分類： | JFETs |
| 英文描述： | 6A, -100V, 0.550 Ohm, Rad Hard, P-Channel Power MOSFETs |
| 中文描述： | 6 A, 100 V, 0.55 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AA |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 57K |
| 代理商： | FRM9130D |
4-1
FRM9130D, FRM9130R,
FRM9130H
6A, -100V, 0.550 Ohm, Rad Hard,
P-Channel Power MOSFETs
File Number
3262.2
Package
TO-204AA
Symbol
D
G
S
Features
6A, -100V, RDS(on) = 0.550
Second Generation Rad Hard MOSFET Results From New Design Concepts
Gamma
- Meets Pre-Rad Specications to 100KRAD(Si)
- Dened End Point Specs at 300KRAD(Si) and 1000KRAD(Si)
- Performance Permits Limited Use to 3000KRAD(Si)
Gamma Dot
- Survives 3E9RAD(Si)/sec at 80% BVDSS Typically
- Survives 2E12 Typically If Current Limited to IDM
Photo Current
- 1.50nA Per-RAD(Si)/sec Typically
Neutron
- Pre-RAD Specications for 3E13 Neutrons/cm2
- Usable to 3E14 Neutrons/cm2
Description
The Intersil has designed a series of SECOND GENERATION hardened power
MOSFETs of both N and P channel enhancement types with ratings from 100V to
500V, 1A to 60A, and on resistance as low as 25m
. Total dose hardness is
offered at 100K RAD(Si) and 1000KRAD(Si) with neutron hardness ranging from
1E13n/cm2 for 500V product to 1E14n/cm2 for 100V product. Dose rate hardness
(GAMMA DOT) exists for rates to 1E9 without current limiting and 2E12 with cur-
rent limiting.
This MOSFET is an enhancement-mode silicon-gate power eld effect transistor of
the vertical DMOS (VDMOS) structure. It is specially designed and processed to
exhibit minimal characteristic changes to total dose (GAMMA) and neutron (no)
exposures. Design and processing efforts are also directed to enhance survival to
heavy ion (SEE) and/or dose rate (GAMMA DOT) exposure.
This part may be supplied as a die or in various packages other than shown above.
Reliability screening is available as either non TX (commercial), TX equivalent of
MIL-S-19500, TXV equivalent of MIL-S-19500, or space equivalent of
MIL-S-19500. Contact the Intersil High-Reliability Marketing group for any desired
deviations from the data sheet.
Absolute Maximum Ratings (TC = +25oC) Unless Otherwise Specied
FRM9130D, R, H
UNITS
Drain-Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS
-100
V
Drain-Gate Voltage (RGS = 20k
). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
-100
V
Continuous Drain Current
TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID
TC = +100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID
6
4
A
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
18
A
Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS
±20
V
Maximum Power Dissipation
TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT
TC = +100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT
Derated Above +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
75
30
0.60
W
W/oC
Inductive Current, Clamped, L = 100
H, (See Test Figure). . . . . . . . . . . . . . . . . . . . . . . . . . ILM
18
A
Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IS
6
A
Pulsed Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ISM
18
A
Operating And Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJC, TSTG
-55 to +150
oC
Lead Temperature (During Soldering)
Distance > 0.063 in. (1.6mm) From Case, 10s Max. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
300
oC
June 1998
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207
| Copyright
Intersil Corporation 1999
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FRM9130H | 6A, -100V, 0.550 Ohm, Rad Hard, P-Channel Power MOSFETs |
| FRM9130R | 6A, -100V, 0.550 Ohm, Rad Hard, P-Channel Power MOSFETs |
| FRM9140D | 11A, -100V, 0.300 Ohm, Rad Hard, P-Channel Power MOSFETs |
| FRM9140H | 11A, -100V, 0.300 Ohm, Rad Hard, P-Channel Power MOSFETs |
| FRM9140R | 11A, -100V, 0.300 Ohm, Rad Hard, P-Channel Power MOSFETs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FRM9130H | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:6A, -100V, 0.550 Ohm, Rad Hard, P-Channel Power MOSFETs |
| FRM9130R | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:6A, -100V, 0.550 Ohm, Rad Hard, P-Channel Power MOSFETs |
| FRM9130R4 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 6A I(D) | TO-204AA |
| FRM9140D | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:11A, -100V, 0.300 Ohm, Rad Hard, P-Channel Power MOSFETs |
| FRM9140H | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:11A, -100V, 0.300 Ohm, Rad Hard, P-Channel Power MOSFETs |
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