參數(shù)資料
型號: FQU6N40
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: 400V N-Channel MOSFET
中文描述: 4.2 A, 400 V, 1.15 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251
封裝: IPAK-3
文件頁數(shù): 5/9頁
文件大?。?/td> 773K
代理商: FQU6N40
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相關(guān)PDF資料
PDF描述
FQD6N50C These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary planar stripe, DMOS technology
FQU6N50C These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary planar stripe, DMOS technology
FQD6N60C 600V N-Channel MOSFET
FQD6N60CTF 600V N-Channel MOSFET
FQD6N60CTM 600V N-Channel MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FQU6N40C 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:400V N-Channel MOSFET
FQU6N40CTU 功能描述:MOSFET 400V N-Channel Adv Q-FET C-Series RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FQU6N40CTU_NBEA001 功能描述:MOSFET 400V N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FQU6N40CTUNBEA001 制造商:Fairchild Semiconductor Corporation 功能描述:Trans MOSFET N-CH 400V 4.5A 3-Pin(3+Tab) IPAK Rail
FQU6N50C 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary planar stripe, DMOS technology