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參數(shù)資料
| 型號： | FQT7N10 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 100V N-Channel MOSFET |
| 中文描述： | 1.7 A, 100 V, 0.35 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 638K |
| 代理商： | FQT7N10 |
May 2001
Rev. A, May 2001
2001 Fairchild Semiconductor Corporation
F
QF E T
TM
FQT7N10
100V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for low voltage applications such as audio amplifier,
high efficiency switching DC/DC converters, and DC motor
control.
Features
1.7A, 100V, R
DS(on)
= 0.35
@V
GS
= 10 V
Low gate charge ( typical 5.8 nC)
Low Crss ( typical 10 pF)
Fast switching
Improved dv/dt capability
Absolute Maximum Ratings
T
C
= 25°C unless otherwise noted
Thermal Characteristics
Symbol
V
DSS
I
D
Parameter
FQT7N10
100
1.7
1.36
6.8
±
25
50
1.7
0.2
6.0
2.0
0.016
-55 to +150
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
Drain-Source Voltage
Drain Current
- Continuous (T
C
= 25°C)
- Continuous (T
C
= 70°C)
- Pulsed
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
C
= 25°C)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
- Derate above 25°C
T
J
, T
STG
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8
"
from case for 5 seconds
T
L
300
°C
Symbol
R
θ
JA
* When mounted on the minimum pad size recommended (PCB Mount)
Parameter
Typ
--
Max
62.5
Units
°C
/
W
Thermal Resistance, Junction-to-Ambient *
! "
!
!
S
!
"
"
D
G
SOT-223
FQT Series
G
D
S
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| FQU12N20L | 200V LOGIC N-Channel MOSFET |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FQT7N10L | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:100V LOGIC N-Channel MOSFET |
| FQT7N10LTF | 功能描述:MOSFET 100V Single RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FQT7N10LTF | 制造商:Fairchild Semiconductor Corporation 功能描述:N CH MOSFET 100V 1.7A SOT-223 |
| FQT7N10LTF-CUT TAPE | 制造商:FAIRCHILD 功能描述:FQT7N10L Series 100 V 0.35 Ohm Surface Mount N-Channel Mosfet - SOT-223 |
| FQT7N10TF | 功能描述:MOSFET 100V Single RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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