參數(shù)資料
型號: FQPF5N40
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: 400V N-Channel MOSFET
中文描述: 3 A, 400 V, 1.6 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: TO-220F, 3 PIN
文件頁數(shù): 1/8頁
文件大?。?/td> 655K
代理商: FQPF5N40
May 2001
QF E T
TM
F
2001 Fairchild Semiconductor Corporation
Rev. A1. May 2001
FQPF55N06
60V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for low voltage applications such as automotive, DC/
DC converters, and high efficiency switching for power
management in portable and battery operated products.
Features
33A, 60V, R
DS(on)
= 0.020
@V
GS
= 10 V
Low gate charge ( typical 35 nC)
Low Crss ( typical 85 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
175
°
C maximum junction temperature rating
Absolute Maximum Ratings
T
C
= 25°C unless otherwise noted
Thermal Characteristics
Symbol
V
DSS
I
D
Parameter
FQPF55N06
60
33
23.4
132
±
25
540
33
4.8
7.0
48
0.32
-55 to +175
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
Drain-Source Voltage
Drain Current
- Continuous (T
C
= 25°C)
- Continuous (T
C
= 100°C)
- Pulsed
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
C
= 25°C)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
- Derate above 25°C
T
J
, T
STG
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8
"
from case for 5 seconds
T
L
300
°C
Symbol
R
θ
JC
R
θ
JA
Parameter
Typ
--
--
Max
3.12
62.5
Units
°C
/
W
°C
/
W
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
! "
!
!
S
!
"
"
D
G
TO-220F
FQPF Series
G
S
D
相關(guān)PDF資料
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