參數(shù)資料
型號： FQP44N10F
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： 100V N-Channel MOSFET
中文描述： 43.5 A, 100 V, 0.039 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝： TO-220, 3 PIN
文件頁數(shù)： 4/8頁
文件大?。?/td> 755K
代理商： FQP44N10F
4
www.fairchildsemi.com
FQP44N10F Rev. A1
F
Typical Performance Characteristics
(Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
Figure 11. Transient Thermal Response Curve
-100
-50
0
50
100
150
200
0.8
0.9
1.0
1.1
1.2
Notes :
1. V
= 0 V
2. I
D
= 250 μA
B
D
,
D
T
J
, Junction Temperature [
o
C]
-100
-50
0
50
100
150
200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
Notes :
1. V
GS
= 10 V
2. I
D
= 21.75 A
R
D
,
D
T
J
, Junction Temperature [
o
C]
25
50
75
100
125
150
175
0
10
20
30
40
50
I
D
,
T
C
, Case Temperature [ ]
10
0
10
1
10
2
10
-1
10
0
10
1
10
2
10
3
DC
10 ms
1 ms
100
μ
s
Operation in This Area
is Limited by R
DS(on)
Notes :
1. T
C
= 25
2. T
J
= 175
3. Single Pulse
o
C
o
C
I
D
,
V
DS
, Drain-Source Voltage [V]
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
-2
10
-1
10
0
N otes :
1. Z
2. D uty F actor, D = t
1
/t
2
3. T
JM
- T
C
= P
D M
* Z
θ
(t) = 1.03
/W M ax.
JC
(t)
single pulse
D =0.5
0.02
0.01
0.2
0.05
0.1
Z
θ
(
t
1
, S q uare W ave P ulse D uration [sec]
t
1
P
DM
t
2
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