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參數(shù)資料
| 型號： | FQP44N10F |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 100V N-Channel MOSFET |
| 中文描述： | 43.5 A, 100 V, 0.039 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | TO-220, 3 PIN |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 755K |
| 代理商： | FQP44N10F |
2005 Fairchild Semiconductor Corporation
FQP44N10F Rev. A1
1
www.fairchildsemi.com
F
January 2006
FRFET
TM
FQP44N10F
100V N-Channel MOSFET
Features
43.5A, 100V, R
DS(on)
= 0.039
@V
GS
= 10 V
Low gate charge ( typical 48 nC)
Low Crss ( typical 85 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
175
°
C maximum junction temperature rating
Description
These N-Channel enhancement mode power field effect tran-
sist-ors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performanc-e, and withstand high energy pulse in the
avalanche and co-mmutation mode. These devices are well
suited for low voltage applications such as audio amplifier, high
efficiency switching DC/DC converters, and DC motor control.
Absolute Maximum Ratings
Thermal Characteristics
TO-220
FQP Series
G
S
D
D
G
S
Symbol
Parameter
FQP44N10F
Units
V
DSS
I
D
Drain-Source Voltage
100
V
Drain Current
- Continuous (T
C
= 25°C)
- Continuous (T
C
= 100°C)
- Pulsed
43.5
A
30.8
A
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
Drain Current
(Note 1)
174
A
Gate-Source Voltage
±
25
V
Single Pulsed Avalanche Energy
(Note 2)
530
mJ
Avalanche Current
(Note 1)
43.5
A
Repetitive Avalanche Energy
(Note 1)
14.6
mJ
Peak Diode Recovery dv/dt
(Note 3)
15
V/ns
P
D
Power Dissipation (T
C
= 25°C)
146
W
- Derate above 25°C
0.97
W/°C
T
J
, T
STG
Operating and Storage Temperature Range
-55 to +175
°C
T
L
Maximum lead temperature for soldering purposes,
1/8 from case for 5 seconds
300
°C
Symbol
Parameter
FQP44N10F
Units
R
θ
JC
R
θ
CS
R
θ
JA
Thermal Resistance, Junction-to-Case
1.03
°C
/
W
Thermal Resistance, Case-to-Sink
0.5
°C
/
W
Thermal Resistance, Junction-to-Ambient
62.5
°C
/
W
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