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參數(shù)資料
| 型號(hào)： | FQH90N15 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel Power MOSFET |
| 中文描述： | 90 A, 150 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD |
| 封裝： | TO-247AD, 3 PIN |
| 文件頁數(shù)： | 3/9頁 |
| 文件大?。?/td> | 678K |
| 代理商： | FQH90N15 |
3
www.fairchildsemi.com
FQH90N15 / FQA90N15 Rev. B
F
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
2
4
6
8
10
10
-1
10
0
10
1
10
2
Notes :
1. V
DS
= 30V
2. 250
μ
s Pulse Test
-55
o
C
175
o
C
25
o
C
I
D
V
GS
, Gate-Source Voltage [V]
10
-1
10
0
10
1
10
1
10
2
V
GS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
Notes :
1. 250
μ
s Pulse Test
2. T
C
= 25
o
C
I
D
,
V
DS
, Drain-Source Voltage [V]
0.0
0.4
0.8
1.2
1.6
2.0
2.4
10
-1
10
0
10
1
10
2
25
o
C
175
o
C
Notes :
1. V
GS
= 0V
2. 250
μ
s Pulse Test
I
D
V
SD
, Source-Drain Voltage [V]
0
50
100
I
D
, Drain Current [A]
150
200
250
300
0.00
0.03
0.06
0.09
0.12
Note : T
J
= 25
o
C
V
GS
= 20V
V
GS
= 10V
R
D
]
D
0
50
100
150
200
250
0
2
4
6
8
10
12
V
DS
= 75V
V
DS
= 30V
V
DS
= 120V
Note : I
D
= 90 A
V
G
,
Q
G
, Total Gate Charge [nC]
10
-1
10
0
10
1
0
3000
6000
9000
12000
15000
18000
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
Notes :
1. V
GS
= 0 V
2. f = 1 MHz
C
rss
C
oss
C
iss
C
V
DS
, Drain-Source Voltage [V]
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