參數(shù)資料
型號(hào)： FQH90N15
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： N-Channel Power MOSFET
中文描述： 90 A, 150 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
封裝： TO-247AD, 3 PIN
文件頁(yè)數(shù)： 1/9頁(yè)
文件大?。?/td> 678K
代理商： FQH90N15
2004 Fairchild Semiconductor Corporation
FQH90N15 / FQA90N15 Rev. B
1
www.fairchildsemi.com
F
QF E T
FQH90N15 / FQA90N15
N-Channel Power MOSFET
Features
90A, 150V, R
DS(on)
= 0.018
@V
GS
= 10 V
Low gate charge (typical 220 nC)
Low C
rss
(typical 200 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
175
°
C maximum junction temperature rating
Description
These N-Channel enhancement mode power field effect transis-
tors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
This advanced technology has been especially tailored to mini-
mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for low volt-
age applications such as audio amplifire, high efficiency switch-
ing for DC/DC converters, and DC motor control, uninterrupted
power supply.
Absolute Maximum Ratings
Thermal Characteristics
! "
!
!
S
!
"
"
"
D
G
G
S
D
TO-247
FQH Series
G
S
D
TO-3P
FQA Series
Symbol
Parameter
FQH90N15/FQA90N15
Unit
V
DSS
I
D
Drain-Source Voltage
150
V
Drain Current
- Continuous (T
C
= 25
°
C)
- Continuous (T
C
= 100
°
C)
- Pulsed
90
63.5
A
A
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
Drain Current
(Note 1)
360
A
Gate-Source voltage
±
25
V
Single Pulsed Avalanche Energy
(Note 2)
1400
mJ
Avalanche Current
(Note 1)
90
A
Repetitive Avalanche Energy
(Note 1)
37.5
mJ
Peak Diode Recovery dv/dt
(Note 3)
6.0
V/ns
P
D
Power Dissipation
(T
C
= 25
°
C)
- Derate above 25
°
C
375
2.5
W
W/
°
C
°
C
T
J,
T
STG
T
L
Operating and Storage Temperature Range
-55 to +175
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
300
°
C
Symbol
Parameter
Min.
Max.
Unit
R
θ
JC
R
θ
CS
R
θ
JA
Thermal Resistance, Junction-to-Case
--
0.4
°
C/W
°
C/W
°
C/W
Thermal Resistance, Case-to-Sink
0.24
--
Thermal Resistance, Junction-to-Ambient
--
40
相關(guān)PDF資料
PDF描述
FQI10N20C 200V N-Channel MOSFET
FQB10N20C 200V N-Channel MOSFET
FQI10N20L 200V LOGIC N-Channel MOSFET
FQB10N20L 200V LOGIC N-Channel MOSFET
FQI10N60C 600V N-Channel MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FQH90N15_06 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Power MOSFET
FQI10N20 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:200V N-Channel MOSFET
FQI10N20C 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:200V N-Channel MOSFET
FQI10N20CTU 功能描述:MOSFET N-CH/200V/10A/QFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FQI10N20L 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:200V LOGIC N-Channel MOSFET
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