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參數(shù)資料
| 型號： | FQH90N10V2 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | Hook-Up Wire; Conductor Size AWG:24; No. Strands x Strand Size:19 x 36; Jacket Color:White; Approval Bodies:UL; Approval Categories:UL AWM Style 1180; Passes VW-1 Flame Test; Cable/Wire MIL SPEC:MIL-W-16878/5 Type EE RoHS Compliant: Yes |
| 中文描述： | 105 A, 100 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD |
| 封裝： | TO-247AD, 3 PIN |
| 文件頁數(shù)： | 1/8頁 |
| 文件大小： | 1017K |
| 代理商： | FQH90N10V2 |
2005 Fairchild Semiconductor Corporation
FQH90N10V2 Rev. A
1
www.fairchildsemi.com
F
QFET
October 2005
FQH90N10V2
100V N-Channel MOSFET
Features
105A, 100V, R
DS(on)
= 10m
@V
GS
= 10 V
Low gate charge ( typical 147 nC)
Low Crss ( typical 300 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
175
°
C maximum junction temperature rating
Description
These N-Channel enhancement mode power field effect transis-
tors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
This advanced technology has been especially tailored to mini-
mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for DC to DC
converters, sychronous rectification, and other applications low-
est Rds(on) is required.
G
S
D
TO-247
FQH Series
D
G
S
Absolute Maximum Ratings
Symbol
Parameter
FQH90N10V2
Unit
V
DSS
I
D
Drain-Source Voltage
100
V
Drain Current
- Continuous (T
C
= 25
°
C)
- Continuous (T
C
= 100
°
C)
- Pulsed
105
78
A
A
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
Drain Current
(Note 1)
420
A
Gate-Source voltage
±
30
V
Single Pulsed Avalanche Energy
(Note 2)
2430
mJ
Avalanche Current
(Note 1)
105
A
Repetitive Avalanche Energy
(Note 1)
33
mJ
Peak Diode Recovery dv/dt
(Note 3)
4.5
V/ns
P
D
Power Dissipation
(T
C
= 25
°
C)
- Derate above 25
°
C
330
2.2
W
W/
°
C
T
J,
T
STG
T
L
Operating and Storage Temperature Range
-55 to +175
°
C
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
300
°
C
Thermal Characteristics
Symbol
Parameter
Min.
Max.
Unit
R
θ
JC
R
θ
CS
R
θ
JA
Thermal Resistance, Junction-to-Case
--
0.45
°
C/W
Thermal Resistance, Case-to-Sink
0.24
--
°
C/W
Thermal Resistance, Junction-to-Ambient
--
40
°
C/W
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| FQH90N15 | 功能描述:MOSFET NCH/150V/90A/QFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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| FQI10N20 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:200V N-Channel MOSFET |
| FQI10N20C | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:200V N-Channel MOSFET |
| FQI10N20CTU | 功能描述:MOSFET N-CH/200V/10A/QFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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