參數(shù)資料
型號(hào)： FQE10N20C
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： 200V N-Channel MOSFET
中文描述： 4 A, 200 V, 0.36 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-126
封裝： TO-126, 3 PIN
文件頁(yè)數(shù)： 1/8頁(yè)
文件大?。?/td> 627K
代理商： FQE10N20C
2004 Fairchild Semiconductor Corporation
Rev. B, January 2004
F
QF E T
FQE10N20C
200V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switching DC/DC converters,
switch mode power supplies, DC-AC converters for
uninterrupted power supplies and motor controls.
Features
4.0A, 200V, R
DS(on)
= 0.36
@V
GS
= 10 V
Low gate charge ( typical 20 nC)
Low Crss ( typical 40.5 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
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▲
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S
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D
G
Absolute Maximum Ratings
T
C
= 25°C unless otherwise noted
Thermal Characteristics
Symbol
V
DSS
I
D
Parameter
FQE10N20C
200
4.0
2.5
16
±
30
320
4.0
1.28
5.5
12.8
0.10
-55 to +150
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
Drain-Source Voltage
Drain Current
- Continuous (T
C
= 25°C)
- Continuous (T
C
= 100°C)
- Pulsed
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
C
= 25°C)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
- Derate above 25°C
T
J
, T
STG
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8
"
from case for 5 seconds
T
L
300
°C
Symbol
R
θ
JC
R
θ
JA
Parameter
Typ
--
--
Max
9.8
62.5
Units
°C
/
W
°C
/
W
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
TO-126
FQE Series
G
S
D
相關(guān)PDF資料
PDF描述
FQE10N20LC 200V Logic N-Channel MOSFET
FQG4902 250V Dual N & P-Channel MOSFET
FQG4904 400V Dual N & P-Channel MOSFET
FQH140N10 100V N-Channel MOSFET
FQH18N50V2 500V N-Channel MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FQE10N20CTU 功能描述:MOSFET 200V N-Channel Adv Q-FET C-Series RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FQE10N20LC 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:200V Logic N-Channel MOSFET
FQE10N20LCTU 功能描述:MOSFET N-CH 200V 4A TO-126 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:QFET™ 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門(mén) 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開(kāi)態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
FQG4902 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:250V Dual N & P-Channel MOSFET
FQG4902TU 功能描述:MOSFET 250V Dual N & P-Ch QFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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