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參數(shù)資料
| 型號： | FQD6P25 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 250V P-Channel MOSFET |
| 中文描述： | 4.7 A, 250 V, 1.1 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252 |
| 封裝： | ROHS COMPLIANT, DPAK-3 |
| 文件頁數(shù)： | 3/9頁 |
| 文件大?。?/td> | 511K |
| 代理商： | FQD6P25 |
2000 Fairchild Semiconductor International
F
Rev. A, April 2000
0.0
0.5
1.0
1.5
2.0
2.5
3.0
10
-1
10
0
10
1
25
150
Notes :
1. V
= 0V
2. 250 s Pulse Test
-
D
-V
SD
, Source-Drain Voltage [V]
2
4
6
8
10
10
-1
10
0
10
1
Notes :
1. V
= -40V
2. 250 s Pulse Test
-55
150
25
-
D
-V
GS
, Gate-Source Voltage [V]
10
-1
10
0
10
1
10
-1
10
0
10
1
GS
V
-10 V
-8.0 V
-7.0 V
-6.5 V
-6.0 V
Bottom : -5.5 V
Notes :
1. 250 s Pulse Test
2. T
C
= 25
-
D
-V
DS
, Drain-Source Voltage [V]
0
4
8
12
16
20
24
0
2
4
6
8
10
12
V
DS
= -125V
V
DS
= -200V
V
DS
= -50V
Note : I
D
= -6.0 A
-
G
,
Q
G
, Total Gate Charge [nC]
10
-1
10
0
10
1
0
200
400
600
800
1000
1200
1400
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
Notes :
1. V
= 0 V
2. f = 1 MHz
C
rss
C
oss
C
iss
C
-V
DS
, Drain-Source Voltage [V]
0
4
8
12
16
20
0.0
0.5
1.0
1.5
2.0
2.5
3.0
Note : T
J
= 25
V
GS
= - 20V
V
GS
= - 10V
R
D
]
D
-I
D
, Drain Current [A]
Typical Characteristics
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
Figure 2. Transfer Characteristics
Figure 1. On-Region Characteristics
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| FQU6P25 | 250V P-Channel MOSFET(漏源電壓為-250V、漏電流為-4.7A的P溝道增強型MOS場效應(yīng)管) |
| FQD7N10 | 100V N-Channel MOSFET |
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| FQD7N20L | 200V Logic N-Channel MOSFET(漏源電壓為200V、漏電流為5.5A的邏輯N溝道增強型MOS場效應(yīng)管) |
| FQD7N30 | 300V N-Channel MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FQD6P25TF | 功能描述:MOSFET 250V P-Ch QFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FQD6P25TM | 功能描述:MOSFET P-CH/250V/4.7A/1.1OHM RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FQD-7F | 制造商:SR Components Inc 功能描述: |
| FQD-7I | 制造商:SR Components Inc 功能描述: |
| FQD-7I-1000 | 制造商:SR COMPONENTS 功能描述: |
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