參數(shù)資料
型號： FQD3N60
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： 600V N-Channel MOSFET
中文描述： 2.4 A, 600 V, 3.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
封裝： DPAK-3
文件頁數(shù)： 2/9頁
文件大?。?/td> 575K
代理商： FQD3N60
2000 Fairchild Semiconductor International
F
(Note 4)
(Note 4, 5)
(Note 4, 5)
(Note 4)
Rev. A, April 2000
Electrical Characteristics
T
C
= 25°C unless otherwise noted
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 64mH, I
= 2.4A, V
DD
= 50V, R
G
= 25
,
Starting T
= 25°C
3. I
3.0A, di/dt
200A/
μ
s, V
DD
4. Pulse Test : Pulse width
300
μ
s, Duty cycle
5. Essentially independent of operating temperature
BV
Starting T
J
= 25°C
2%
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
Drain-Source Breakdown Voltage
BV
DSS
/
T
J
Coefficient
I
DSS
Zero Gate Voltage Drain Current
V
GS
= 0 V, I
D
= 250
μ
A
600
--
--
V
Breakdown Voltage Temperature
I
D
= 250
μ
A, Referenced to 25°C
--
0.6
--
V/°C
V
DS
= 600 V, V
GS
= 0 V
V
DS
= 480 V, T
C
= 125°C
V
GS
= 30 V, V
DS
= 0 V
V
GS
= -30 V, V
DS
= 0 V
--
--
--
--
--
--
--
--
10
100
100
-100
μ
A
μ
A
nA
nA
I
GSSF
I
GSSR
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
On Characteristics
V
GS(th)
Gate Threshold Voltage
R
DS(on)
Static Drain-Source
On-Resistance
g
FS
Forward Transconductance
V
DS
= V
GS
, I
D
= 250
μ
A
3.0
--
5.0
V
V
GS
= 10 V, I
D
= 1.2 A
--
2.8
3.6
V
DS
= 50 V, I
D
= 1.2 A
--
2.4
--
S
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
--
--
--
350
50
5.5
450
65
7.5
pF
pF
pF
Switching Characteristics
t
d(on)
Turn-On Delay Time
t
r
Turn-On Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Turn-Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate-Source Charge
Q
gd
Gate-Drain Charge
V
DD
= 300 V, I
D
= 3.0 A,
R
G
= 25
--
--
--
--
--
--
--
10
30
20
30
10
2.7
4.9
30
70
50
70
13
--
--
ns
ns
ns
ns
nC
nC
nC
V
DS
= 480 V, I
D
= 3.0 A,
V
GS
= 10 V
Drain-Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current
I
SM
Maximum Pulsed Drain-Source Diode Forward Current
V
SD
Drain-Source Diode Forward Voltage
t
rr
Reverse Recovery Time
Q
rr
Reverse Recovery Charge
--
--
--
--
--
--
--
--
2.4
9.6
1.4
--
--
A
A
V
ns
μ
C
V
GS
= 0 V, I
S
= 2.4 A
V
GS
= 0 V, I
S
= 3.0 A,
dI
F
/ dt = 100 A/
μ
s
210
1.2
相關PDF資料
PDF描述
FQU3N60 600V N-Channel MOSFET
FQD3P20 200V P-Channel MOSFET
FQU3P20 200V P-Channel MOSFET
FQD3P50 500V P-Channel MOSFET(漏源電壓為-500V、漏電流為2.1A的P溝道增強型MOS場效應管)
FQU3P50 500V P-Channel MOSFET(漏源電壓為-500V、漏電流為2.1A的P溝道增強型MOS場效應管)
相關代理商/技術參數(shù)
參數(shù)描述
FQD3N60C 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:600V N-Channel MOSFET
FQD3N60CTF 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:600V N-Channel MOSFET
FQD3N60CTM 功能描述:MOSFET 500V N-CHA NNEL MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FQD3N60CTM_WS 功能描述:MOSFET 600V 2.4A N-Channel Q-FET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FQD3N60TF 功能描述:MOSFET 600V N-Channel QFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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