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參數(shù)資料
| 型號(hào)： | FQAF55N10 |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 41.9A I(D) | TO-247VAR |
| 中文描述： | 晶體管| MOSFET的| N溝道| 100V的五（巴西）直| 41.9AI（四）|對(duì)247VAR |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大?。?/td> | 650K |
| 代理商： | FQAF55N10 |
2000 Fairchild Semiconductor International
August 2000
Rev. A, July 2000
F
QFET
TM
FQAF55N10
100V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for low voltage applications such as audio amplifier,
high efficiency switching DC/DC converters, and DC motor
control.
Features
41.9A, 100V, R
DS(on)
= 0.026
@V
GS
= 10 V
Low gate charge ( typical 75 nC)
Low Crss ( typical 130 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
175
°
C maximum junction temperature rating
Absolute Maximum Ratings
T
C
= 25°C unless otherwise noted
Thermal Characteristics
Symbol
V
DSS
I
D
Parameter
FQA55N10
100
41.9
29.6
167.6
±
25
1100
41.9
9.0
6.0
90
0.6
-55 to +175
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
Drain-Source Voltage
Drain Current
- Continuous (T
C
= 25°C)
- Continuous (T
C
= 100°C)
- Pulsed
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
C
= 25°C)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
- Derate above 25°C
T
J
, T
STG
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8
"
from case for 5 seconds
T
L
300
°C
Symbol
R
θ
JC
R
θ
JA
Parameter
Typ
--
--
Max
1.67
40
Units
°C
/
W
°C
/
W
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
! "
!
!
S
!
"
"
D
G
TO-3PF
FQAF Series
G
S
D
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