參數(shù)資料
型號(hào): FQA8N80
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: 800V N-Channel MOSFET
中文描述: 8.4 A, 800 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: TO-3P, 3 PIN
文件頁(yè)數(shù): 4/8頁(yè)
文件大小: 693K
代理商: FQA8N80
2001 Fairchild Semiconductor Corporation
Rev. A, March 2001
F
10
0
10
V
DS
, Drain-Source Voltage [V]
1
10
2
10
3
10
-2
10
-1
10
0
10
1
10
2
10
μ
s
DC
10 ms
1 ms
100
μ
s
Operation in This Area
is Limited by R
DS(on)
Notes :
1. T
C
= 25
2. T
= 150
3. Single Pulse
o
C
o
C
I
D
,
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
-2
10
-1
Notes :
1. Z
(t) = 0.57
/W M ax.
2. D uty Factor, D=t
1
/t
2
3. T
JM
- T
C
= P
DM
* Z
θ
JC
(t)
single pulse
D =0.5
0.02
0.2
0.05
0.1
0.01
Z
θ
(
t
1
, S quare W ave Pulse D uration [sec]
25
50
75
100
125
150
0.0
1.5
3.0
4.5
6.0
7.5
9.0
I
D
,
T
C
, Case Temperature [
]
-100
-50
0
50
100
150
200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
Notes :
1. V
= 10 V
2. I
D
= 4.2 A
R
D
,
D
T
J
, Junction Temperature [
o
C]
-100
-50
0
50
100
150
200
0.8
0.9
1.0
1.1
1.2
Notes :
1. V
= 0 V
2. I
D
= 250
μ
A
B
D
,
D
T
J
, Junction Temperature [
o
C]
Typical Characteristics
(Continued)
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs Case Temperature
Figure 7. Breakdown Voltage Variation
vs Temperature
Figure 8. On-Resistance Variation
vs Temperature
Figure 11. Transient Thermal Response Curve
t
1
P
DM
t
2
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