參數(shù)資料
型號： FQA8N80
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： 800V N-Channel MOSFET
中文描述： 8.4 A, 800 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： TO-3P, 3 PIN
文件頁數(shù)： 1/8頁
文件大?。?/td> 693K
代理商： FQA8N80
2001 Fairchild Semiconductor Corporation
March 2001
Rev. A, March 2001
F
QF E T
TM
FQA8N80
800V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supplies..
Features
8.4A, 800V, R
DS(on)
= 1.2
@V
GS
= 10 V
Low gate charge ( typical 44 nC)
Low Crss ( typical 20 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
Absolute Maximum Ratings
T
C
= 25°C unless otherwise noted
Thermal Characteristics
Symbol
V
DSS
I
D
Parameter
FQA8N80
800
8.4
5.3
33.6
±
30
850
8.4
22
4.0
220
1.75
-55 to +150
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
Drain-Source Voltage
Drain Current
- Continuous (T
C
= 25°C)
- Continuous (T
C
= 100°C)
- Pulsed
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
C
= 25°C)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
- Derate above 25°C
T
J
, T
STG
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8
"
from case for 5 seconds
T
L
300
°C
Symbol
R
θ
JC
R
θ
CS
R
θ
JA
Parameter
Typ
--
0.24
--
Max
0.57
--
40
Units
°C
/
W
°C
/
W
°C
/
W
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
TO-3P
FQA Series
G
S
D
●
●
●
●
●
▲
!
S
!
!
!
D
G
相關(guān)PDF資料
PDF描述
FQA8N90C TERMINAL
FQA90N08 80V N-Channel MOSFET
FQA90N10V2 Hook-Up Wire; Conductor Size AWG:24; No. Strands x Strand Size:19 x 36; Jacket Color:White; Approval Bodies:UL; Approval Categories:UL AWM Style 1180; Passes VW-1 Flame Test; Cable/Wire MIL SPEC:MIL-W-16878/5 Type EE RoHS Compliant: Yes
FQA90N15 150V N-Channel MOSFET(漏源電壓為150V的N溝道增強型MOSFET)
FQA9N50 500V N-Channel MOSFET(漏源電壓為500V的N溝道增強型MOSFET)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FQA8N80_06 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:800V N-Channel MOSFET
FQA8N80_F109 功能描述:MOSFET 800V N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FQA8N80C 功能描述:MOSFET 800V N-Ch Q-FET advance C-Series RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FQA8N80C_06 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:800V N-Channel MOSFET
FQA8N80C_07 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:800V N-Channel MOSFET
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