參數(shù)資料
型號： FQA8N100C
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： 1000V N-Channel MOSFET
中文描述： 8 A, 1000 V, 1.45 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： TO-3P, 3 PIN
文件頁數(shù)： 2/8頁
文件大?。?/td> 693K
代理商： FQA8N100C
2
www.fairchildsemi.com
FQA8N100C Rev. A
F
Package Marking and Ordering Information
Electrical Characteristics
T
C
= 25°C unless otherwise noted
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 25mH, I
AS
= 8A, V
DD
= 50V, R
G
= 25
, Starting T
J
= 25
°
C
3. I
SD
≤
8A, di/dt
≤
200A/
μ
s, V
DD
≤
BV
DSS
, Starting T
J
= 25
°
C
4. Pulse Test: Pulse width
≤
300
μ
s, Duty Cycle
≤
2%
5. Essentially Independent of Operating Temperature Typical Characteristics
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FQA8N100C
FQA8N100C
TO-3P
--
--
30
Symbol
Parameter
Conditions
Min.
Typ.
Max
Units
Off Characteristics
BV
DSS
BV
DSS
/
T
J
I
DSS
Drain-Source Breakdown Voltage
V
GS
= 0V, I
D
= 250
μ
A
1000
--
--
V
Breakdown Voltage Temperature
Coefficient
I
D
= 250
μ
A, Referenced to 25
°
C
--
1.4
--
V/
°
C
Zero Gate Voltage Drain Current
V
DS
= 1000V, V
GS
= 0V
V
DS
= 800V, T
C
= 125
°
C
V
GS
= 30V, V
DS
= 0V
V
GS
= -30V, V
DS
= 0V
--
--
--
--
10
100
μ
A
μ
A
I
GSSF
I
GSSR
On Characteristics
Gate-Body Leakage Current, Forward
--
--
100
nA
Gate-Body Leakage Current, Reverse
--
--
-100
nA
V
GS(th)
R
DS(on)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250
μ
A
3.0
--
5.0
V
Static Drain-Source
On-Resistance
V
GS
= 10V, I
D
= 4A
--
1.2
1.45
g
FS
Dynamic Characteristics
Forward Transconductance
V
DS
= 50V, I
D
= 4A
(Note 4)
--
8.0
--
S
C
iss
C
oss
C
rss
Switching Characteristics
Input Capacitance
V
DS
= 25V, V
GS
= 0V,
f = 1.0MHz
--
2475
3220
pF
Output Capacitance
--
195
255
pF
Reverse Transfer Capacitance
--
16
24
pF
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Turn-On Delay Time
V
DD
= 500V, I
D
= 8A
R
G
= 25
(Note 4, 5)
--
50
110
ns
Turn-On Rise Time
--
95
200
ns
Turn-Off Delay Time
--
122
254
ns
Turn-Off Fall Time
--
80
170
ns
Total Gate Charge
V
DS
= 800V, I
D
= 8A
V
GS
= 10V
(Note 4, 5)
--
53
70
nC
Gate-Source Charge
--
13
--
nC
Gate-Drain Charge
--
23
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
I
S
I
SM
V
SD
t
rr
Q
rr
Maximum Continuous Drain-Source Diode Forward Current
--
--
8
A
Maximum Pulsed Drain-Source Diode Forward Current
--
--
32
A
Drain-Source Diode Forward Voltage
V
GS
= 0V, I
S
= 8A
V
GS
= 0V, I
S
= 8A
dI
F
/dt =100A/
μ
s
(Note 4)
--
--
1.4
V
Reverse Recovery Time
--
620
--
ns
Reverse Recovery Charge
--
5.2
--
μ
C
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