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參數(shù)資料
| 型號： | FPNH10 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | NPN RF Transistor(NPN射頻晶體管) |
| 中文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-92 |
| 文件頁數(shù)： | 2/11頁 |
| 文件大?。?/td> | 343K |
| 代理商： | FPNH10 |
F
Electrical Characteristics
TA = 25
°
C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V
(BR)CEO
Collector-Emitter Sustaining Voltage*
V
(BR)CBO
Collector-Base Breakdown Voltage
V
(BR)EBO
Emitter-Base Breakdown Voltage
I
CBO
Collector Cutoff Current
I
EBO
Emitter Cutoff Current
I
C
= 1.0 mA, I
B
= 0
I
C
= 100
μ
A, I
E
= 0
I
E
= 10
μ
A, I
C
= 0
V
CB
= 25 V, I
E
= 0
V
EB
= 2.0 V, I
C
= 0
25
30
3.0
V
V
V
nA
nA
100
100
ON CHARACTERISTICS
h
FE
DC Current Gain
V
CE(
sat
)
Collector-Emitter Saturation Voltage
V
BE(
on
)
Base-Emitter On Voltage
I
C
= 4.0 mA, V
CE
= 10 V
I
C
= 4.0 mA, I
B
= 0.4 mA
I
C
= 4.0 mA, V
CE
= 10 V
60
0.5
0.95
V
V
SMALL SIGNAL CHARACTERISTICS
f
T
Current Gain - Bandwidth Product
I
C
= 4.0 mA, V
CE
= 10 V,
f = 100 MHz
V
CB
= 10 V, I
E
= 0, f = 1.0 MHz
V
CB
= 10 V, I
E
= 0, f = 1.0 MHz
650
MHz
C
cb
C
rb
Collector-Base Capacitance
Common-Base Feedback
Capacitance
Collector Base Time Constant
0.720
0.65
pF
pF
0.34
rb
’
C
c
I
= 4.0 mA, V
CB
= 10 V,
f = 31.8 MHz
9.0
ps
*
Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2.0%
Spice Model
NPN (Is=69.28E-18 Xti=3 Eg=1.11 Vaf=100 Bf=308.6 Ne=1.197 Ise=69.28E-18 Ikf=22.83m Xtb=1.5 Br=1.11
Nc=2 Isc=0 Ikr=0 Rc=4 Cjc=1.042p Mjc=.2468 Vjc=.75 Fc=.5 Cje=1.52p Mje=.3223 Vje=.75 Tr=1.558n
Tf=135.8p Itf=.27 Vtf=10 Xtf=30 Rb=10)
NPN RF Transistor
(continued)
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| FPNH10_Q | 功能描述:兩極晶體管 - BJT NPN/ 25V/ 50mA RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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