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參數(shù)資料
| 型號： | FPNH10 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | NPN RF Transistor(NPN射頻晶體管) |
| 中文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-92 |
| 文件頁數(shù)： | 1/11頁 |
| 文件大?。?/td> | 343K |
| 代理商： | FPNH10 |
F
NPN RF Transistor
This device is designed for use in low noise UHF/VHF amplifiers,
with collector currents in the 100
μ
A to 20 mA range in common
emitter or common base mode of operations, and in low frequency
drift, high output UHF oscillators. Sourced from Process 42.
FPNH10
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
stg
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Operating and Storage Junction Temperature Range
25
30
3.0
50
V
V
V
mA
°
C
-55 to +150
NOTES
:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
TA = 25
°
C unless otherwise noted
C
E
B
TO-92
Symbol
Characteristic
Max
Units
FPNH10
350
2.8
125
357
P
D
Total Device Dissipation
Derate above 25
°
C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
mW
mW/
°
C
°
C/W
°
C/W
R
θ
JC
R
θ
JA
*
Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
2000 Fairchild Semiconductor Corporation
FPNH10 Rev. A
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