- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄370216 > FPD750 0.5W POWER PHEMT PDF資料下載
參數(shù)資料
| 型號： | FPD750 |
| 英文描述： | 0.5W POWER PHEMT |
| 中文描述： | 為0.5W功率PHEMT器件 |
| 文件頁數(shù)： | 5/5頁 |
| 文件大小： | 244K |
| 代理商： | FPD750 |
FPD750DFN
L
OW
N
OISE
,
H
IGH
L
INEARITY
P
ACKAGED
PHEMTT
Phone:
+1 408 850-5790
Fax:
+1 408 850-5766
http://
www.filtronic.co.uk/semis
Revised:
11/14/05
Email:
sales@filcsi.com
Note: The recommended method for measuring I
DSS
, or any particular I
DS
, is to set the Drain-Source
voltage (V
DS
) at 1.3V. This measurement point avoids the onset of spurious self-oscillation which
would normally distort the current measurement (this effect has been filtered from the I-V curves
presented above). Setting the V
DS
> 1.3V will generally cause errors in the current measurements,
even in stabilized circuits.
Recommendation: Traditionally a device’s I
DSS
rating (I
DS
at V
GS
= 0V) was used as a predictor of
RF power, and for MESFETs there is a correlation between I
DSS
and P
1dB
(power at 1dB gain
compression). For pHEMTs it can be shown that there is
no
meaningful statistical correlation
between I
DSS
and P
1dB
; specifically a linear regression analysis shows r
2
< 0.7, and the regression
fails the F-statistic test. I
DSS
is sometimes useful as a guide to circuit tuning, since the S
22
does vary
with the quiescent operating point I
DS
.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FPDA200V | HIGH PERFORMANCE PHEMT WITH SOURCE VIAS |
| FPF-RAH66 | Analog IC |
| RAH66 | Analog IC |
| FPF35 | Analog IC |
| FPF36 | Analog IC |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FPD750_1 | 制造商:FILTRONIC 制造商全稱:FILTRONIC 功能描述:0.5W POWER PHEMT |
| FPD750-000 | 制造商:RFMD 制造商全稱:RF Micro Devices 功能描述:0.5W POWER pHEMT |
| FPD750-000S3 | 制造商:RFMD 制造商全稱:RF Micro Devices 功能描述:0.5W POWER pHEMT |
| FPD750-000SQ | 制造商:RFMD 制造商全稱:RF Micro Devices 功能描述:0.5W POWER pHEMT |
| FPD750DFN | 制造商:FILTRONIC 制造商全稱:FILTRONIC 功能描述:LOW NOISE HIGH LINEARITY PACKAGED PHEMT |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。