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參數(shù)資料
| 型號： | FP209 |
| 廠商： | Sanyo Electric Co.,Ltd. |
| 英文描述： | NPN Epitaxial Planar Silicon Transistor Driver Applications |
| 中文描述： | 瑞展硅晶體管驅(qū)動器應(yīng)用 |
| 文件頁數(shù)： | 3/3頁 |
| 文件大?。?/td> | 95K |
| 代理商： | FP209 |
FP209
PS No.4536-3/3
No products described or contained herein are intended for use in surgical implants, life-support systems,
aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and
the like, the failure of which may directly or indirectly cause injury, death or property loss.
Anyone purchasing any products described or contained herein for an above-mentioned use shall:
Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates,
subsidiaries and distributors and all their officers and employees, jointly and severally, against any
and all claims and litigation and all damages, cost and expenses associated with such use:
Not impose any responsibilty for any fault or negligence which may be cited in any such claim or
litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of
their officers and employees jointly or severally.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant-
eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees
are made or implied regarding its use or any infringements of intellectual property rights or other rights of
third parties.
This catalog provides information as of May, 1998. Specifications and information herein are subject to
change without notice.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FP2-09 | 制造商:TE Connectivity 功能描述: |
| FP2093 | 制造商:BACO Controls Inc 功能描述: |
| FP209-TL-E | 制造商:SANYO Semiconductor Co Ltd 功能描述:TRANSISTORNPNNPN25V2APCP5 |
| FP20R06KL4 | 功能描述:IGBT 模塊 600V 20A EASY MOUNT RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: |
| FP20R06W1E3 | 功能描述:IGBT 模塊 N-CH 600V 27A RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: |
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