Preliminary Data Sheet
1.1
1
Preliminary specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com
Contact Details (USA): Tel: +1 (408) 850 5790 Fax: +1 (408) 850 5766 Email:
sales@filcsi.com
Website: www.filcs.com
FMS2011
SP6T GaAs Multi-Band GSM Antenna Switch
Features:
Available in die form
Suitable for multi-band GSM/DCS/PCS/EDGE
applications
Excellent low control voltage performance
Excellent harmonic performance under
GSM/DCS/PCS power levels
Very high Tx-Rx isolation >45dB typ. at 1.8GHz
Very high Tx-Tx isolation >30dB typ. at 1.8GHz
Very low Tx Insertion loss
Very low control current
Description and Applications:
The FMS2011 is a low loss, high power and linear single pole six throw Gallium Arsenide antenna
switch designed for use in mobile handset applications. The die is fabricated using the Filtronic FL05
0.5
μ
m switch process technology which offers leading edge performance optimised for switch
applications. The FMS2011 is designed for use in dual, tri and quad – band GSM handset antenna
switch modules and RF front-end modules.
Electrical Specifications:
(T
AMBIENT
= 25°C,V
control
= 0V/2.5V, Z
IN
= Z
OUT
= 50
)
Parameter
Test Conditions
Min
Typ
Max
Units
Tx Insertion Loss
0.5 – 1.0 GHz
1.0 – 2.0 GHz
__
__
0.5
0.6
0.7
0.9
dB
dB
Rx Insertion Loss
0.5 – 1.0 GHz
1.0 – 2.0 GHz
__
__
0.6
0.8
0.8
1.2
dB
dB
Return Loss
0.5 – 2.5 GHz
__
23
__
dB
Isolation
TX-RX
0.5 – 1.0 GHz
1.0 – 2.0 GHz
30
25
33
31
__
__
dB
dB
Isolation
TX-TX
0.5 – 1.0 GHz
1.0 – 2.0 GHz
45
40
50
45
__
__
dB
dB
2nd Harmonic Level
1 GHz, Pin = +35 dBm, 100% Duty Cycle
2 GHz, Pin = +33 dBm, 100% Duty Cycle
(17:1 VSWR)
__
__
-75
-75
-70
-70
dBc
dBc
3rd Harmonic Level
1 GHz, Pin = +35 dBm, 100% Duty Cycle
2 GHz, Pin = +33 dBm, 100% Duty Cycle
(17:1 VSWR)
__
__
-75
-75
-70
-70
dBc
dBc
Switching speed : Trise, Tfall
Ton, Toff
Note:
External DC blocking capacitors are required on all RF ports (typ: 100pF).
All unused ports terminated in 50
.
10% to 90% RF and 90% to 10% RF
50% control to 90% RF and 50% control to 10% RF
__
__
< 0.3
< 1.0
__
__
μ
s
μ
s
ANT
VTX1
TX1
VTX2
TX2
VRX1
RX1
RX3
RX2
VRX3
RX4
VRX4
VRXC
VRX2